K9F1208B0C SAMSUNG [Samsung semiconductor], K9F1208B0C Datasheet - Page 10

• Manufacturer Part Number: K9F1208B0C
• Description: 64M x 8 Bits NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1208U0C
K9F1208R0C
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND at the condision of K9F1208X0C-XCB0
DC AND OPERATING CHARACTERISTICS
Notes :
1. Typical values are measured at Vcc=3.3V, TA=25°C. And not 100% tested.
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Voltage on any pin relative to VSS
Temperature Under
Bias
Storage Temperature
Short Circuit Current
Operating
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Maximum DC voltage on input/output pins is V
Current
Parameter
Parameter
Sequential
Read
Program
Erase
Parameter
K9F1208B0C
Symbol
V
V
K9F1208X0C-XCB0
K9F1208X0C-XIB0
K9F1208X0C-XCB0
K9F1208X0C-XIB0
CC
SS
I
Symbol
OL
ICC1
ICC2
ICC3
ISB1
ISB2
V
V
V
I
V
I
(R/B) V
LO
LI
OH
OL
IH
IL
1.65
Min
0
1.8V(K9F1208R0C)
tRC=42ns, CE=V
I
CE=V
CE=V
V
V
K9F1208R0C: I
K9F1208B0C: I
K9F1208U0C: I
K9F1208R0C: I
K9F1208B0C: I
K9F1208U0C: I
OUT
CC
IN
OUT
OL
+0.3V which, during transitions, may overshoot to V
=0 to Vcc(max)
=0.4V
=0mA
=0 to Vcc(max)
Typ.
IH
CC
1.8
Test Conditions
0
, WP=0V/V
-0.2, WP=0V/V
Symbol
T
T
V
V
V
I
BIAS
STG
OS
CC
I/O
IN
-
-
-
Max
1.95
OH
OL
OH
OH
OL
OL
0
IL
=100µA
=100µA
=2.1mA
=-100µA
=-100µA
=-400µA
,
CC
(Recommended operating conditions otherwise noted.)
-0.6 to Vcc + 0.3 (< 2.45V)
10
CC
:
Min
2.5
T
0
A
2.7V(K9F1208B0C)
=0 to 70°C or K9F1208X0C-XIB0
-0.6 to + 2.45
-0.6 to + 2.45
1.8V Device
V
-0.4
-0.3
V
-0.1
Min Typ Max
3
CC
CC
-
-
-
-
-
-
-
-
Typ.
2.7
1.8V
0
10
8
8
8
4
-
-
-
-
-
-
-
+0.3
V
±10
±10
0.4
0.1
20
20
20
50
1
CC
-
-
-10 to +125
-40 to +125
-65 to +150
Max
2.9
Rating
0
CC
V
-0.4
-0.3
V
-0.4
Min
5
+2.0V for periods <20ns.
K9F1208X0C
3
-
-
-
-
-
-
-
CC
CC
-
-0.6 to Vcc + 0.3 (< 4.6V)
2.7V
Min
Typ Max Min Typ Max
2.7
10
10
10
10
2.7V/3.3V Device
0
4
-
-
-
-
-
-
-
3.3V(K9F1208U0C)
FLASH MEMORY
-0.6 to + 4.6
-0.6 to + 4.6
+0.3
V
±10
±10
0.5
0.4
20
20
20
50
:
1
CC
-
-
T
A
Typ.
3.3
=-40 to 85°C)
0
-0.3
2.0
2.4
8
-
-
-
-
-
-
-
-
3.3V
10
10
10
10
10
-
-
-
-
-
-
-
Max
3.6
0
V
±10
±10
+0.
0.8
0.4
20
20
20
50
1
CC
3
-
-
Unit
mA
Unit
°C
°C
V
V
V
Uni
mA
mA
µA
V
t