M464S1724CT1-C1H SAMSUNG [Samsung semiconductor], M464S1724CT1-C1H Datasheet - Page 7
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M464S1724CT1-C1H
Manufacturer Part Number
M464S1724CT1-C1H
Description
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.M464S1724CT1-C1H.pdf
(9 pages)
AC CHARACTERISTICS
REFER TO THE INDIVIDUAL COMPONENT, NOT THE WHOLE MODULE.
Notes :
M464S1724CT1
CLK cycle time
CLK to valid output delay
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in Hi-Z
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
(AC operating conditions unless otherwise noted)
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
Symbol
t
t
t
t
t
t
SAC
t
t
t
SHZ
SLZ
CC
OH
CH
CL
SS
SH
Min
10
10
3
3
3
3
2
1
1
-1H
1000
Max
6
6
6
6
Min
10
12
3
3
3
3
2
1
1
Rev. 0.0 April. 2000
-1L
PC100 SODIMM
1000
Max
6
7
6
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1,2
1
2
3
3
3
3
2