M368L2923BTM-CCC SAMSUNG [Samsung semiconductor], M368L2923BTM-CCC Datasheet - Page 13
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M368L2923BTM-CCC
Manufacturer Part Number
M368L2923BTM-CCC
Description
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.M368L2923BTM-CCC.pdf
(25 pages)
9.3 M381L6523BT(U) [ (64M x 8) * 9, 512MB ECC Module ]
9.4 M368L2923BT(U) [ (64M x 8) * 16, 1GB Non ECC Module ]
256MB, 512MB, 1GB Unbuffered DIMM
IDD6
IDD6
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
IDD4W
Symbol
IDD2P
IDD2Q
IDD3P
IDD3N
IDD4R
IDD7A
IDD2F
IDD4W
IDD2Q
IDD3N
IDD4R
IDD2P
IDD2F
IDD3P
IDD7A
IDD0
IDD1
IDD5
IDD0
IDD1
IDD5
Low power
Low power
Normal
Normal
CC(DDR400@CL=3)
CC(DDR400@CL=3)
1,485
1,665
1,800
2,160
2,385
3,870
270
225
500
855
2,080
2,240
1,520
2,360
2,680
2,880
4,200
45
45
27
480
400
880
80
80
48
B0(DDR333@CL=2.5)
B0(DDR333@CL=2.5)
1,130
1,350
1,490
1,710
2,250
3,600
270
230
270
450
1,400
1,600
1,720
1,920
2,400
3,600
45
45
27
480
400
480
800
80
80
48
Rev. 1.1 June 2005
Unit
DDR SDRAM
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
(V
(V
DD
DD
=2.7V, T = 10°C)
=2.7V, T = 10°C)
Optional
Optional
Notes
Notes