M391B5273CH0 SAMSUNG [Samsung semiconductor], M391B5273CH0 Datasheet - Page 15

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M391B5273CH0

Manufacturer Part Number
M391B5273CH0
Description
240pin Unbuffered DIMM based on 2Gb C-die
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
Unbuffered DIMM
12. AC & DC Input Measurement Levels
12.1 AC & DC Logic Input Levels for Single-ended Signals
[ Table 2 ] Single Ended AC and DC input levels for Command and Address
NOTE :
1. For input only pins except RESET, V
2. See ’Overshoot/Undershoot Specification’ on page 18.
3. The AC peak noise on V
4. For reference : approx. V
5. V
6. V
7. V
8. V
[ Table 3 ] Single Ended AC and DC input levels for DQ and DM
NOTE :
1. For input only pins except RESET, V
2. See ’Overshoot/Undershoot Specification’ on page 18.
3. The AC peak noise on V
4. For reference : approx. V
5. V
6. V
7. V
8. V
V
V
V
V
V
V
V
V
V
V
V
V
used when VREF + 150mV is referenced.
V
IH.DQ
IH.DQ
IH.DQ
V
IH.CA
IL.CA
IH.CA
IH.CA
IL.DQ
IL.DQ
IL.DQ
IL.CA
IL.CA
when V
V
IH
IL
IH
IL
IH
IL
IL
IH
REFCA
REF
REF
Symbol
Symbol
(dc) is used as a simplified symbol for V
(ac) is used as a simplified symbol for V
when V
(dc) is used as a simplified symbol for V
(ac) is used as a simplified symbol for V
(dc) is used as a simplified symbol for V
(ac) is used as a simplified symbol for V
(dc) is used as a simplified symbol for V
(ac) is used as a simplified symbol for V
DQ
(DC100) DC input logic low
(AC175) AC input logic low
(AC150) AC input logic low
(DC100) DC input logic high
(AC175) AC input logic high
(AC150) AC input logic high
(DC100) DC input logic high
(DC100) DC input logic low
(AC175) AC input logic low
(AC150) AC input logic low
(AC175) AC input logic high
(AC150) AC input logic high
- 150mV is referenced.
REF
(DC)
(DC)
REF
+ 150mV is referenced.
- 150mV is referenced.
Reference Voltage for ADD,
CMD inputs
Reference Voltage for DQ,
DM inputs
REF
REF
DD
DD
/2 ± 15mV
/2 ± 15mV
Parameter
Parameter
may not allow V
may not allow V
REF
REF
= V
= V
IL.CA
IL.DQ
IL.CA
IL.DQ
IH.CA
IH.DQ
REFCA
IH.CA
REFDQ
IH.DQ
REF
REF
(AC175) and V
(DC100)
(AC175), V
(DC100)
(DC100)
(DC100)
to deviate from V
(AC175) and V
to deviate from V
(AC175), V
(DC)
(DC)
V
V
V
0.49*V
REF
REF
REF
IL.DQ
NOTE 2
NOTE 2
Min.
IH.DQ
V
IL.CA
SS
(AC150) ; V
+ 100
+ 175
+ 150
IH.CA
datasheet
(AC150) ; V
DD
REF
DDR3-800/1066
REF
(AC150); V
(AC150); V
V
V
(DC) by more than ± 1% V
(DC) by more than ± 1% V
V
0.49*V
REF
REF
NOTE 2
NOTE 2
REF
Min.
V
IL.DQ
SS
+ 100
+ 175
+150
IL.CA
IH.DQ
DD
(AC175) value is used when V
IH.CA
V
V
V
(AC175) value is used when V
0.51*V
(AC175) value is used when V
NOTE 2
NOTE 2
REF
REF
REF
DDR3-800/1066/1333/1600
- 15 -
Max.
(AC175) value is used when V
V
DD
- 100
- 175
- 150
DD
DD
DD
(for reference : approx. ± 15mV)
(for reference : approx. ± 15mV)
V
V
0.49*V
REF
REF
NOTE 2
Min.
V
REF
SS
-
-
+ 100
+ 150
REF
DDR3-1333/1600
REF
- 175mV is referenced, V
DD
REF
- 175mV is referenced and V
V
V
+ 175mV is referenced, V
V
0.51*V
NOTE 2
NOTE 2
REF
REF
+ 175mV is referenced and V
REF
Max.
V
DD
- 100
- 175
-150
DD
V
V
0.51*V
REF
NOTE 2
REF
Max.
V
DD
-
-
- 100
- 150
DDR3 SDRAM
DD
IL.DQ
(AC150) value is used when
IH.DQ
IL.CA
(AC150) value is used
(AC150) value is used
IH.CA
Unit
Unit
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
V
V
(AC150) value is
Rev. 1.21
NOTE
NOTE
1,2,7
1,2,8
1,2,7
1,2,8
1,2,7
1,2,8
1,2,7
1,2,8
1,5
1,6
3,4
1,5
1,6
3,4

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