M470T2953CZ0-CCC SAMSUNG [Samsung semiconductor], M470T2953CZ0-CCC Datasheet
M470T2953CZ0-CCC
Related parts for M470T2953CZ0-CCC
M470T2953CZ0-CCC Summary of contents
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Unbuffered SODIMMs DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED ...
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... M470T3354CZ3-C(L)E7/E6/D5/CC 256MB M470T3354CZ0-C(L)E7/E6/D5/CC 256MB M470T6554CZ3-C(L)E7/E6/D5/CC 512MB M470T6554CZ0-C(L)E7/E6/D5/CC 512MB M470T2953CZ3-C(L)E7/E6/D5/CC M470T2953CZ0-C(L)E7/E6/D5/CC Note: “Z” of Part number(11th digit) stand for Lead-free products. Note: “3” of Part number(12th digit) stand for Dummy Pad PCB products. Features • Performance range E7 (DDR2-800) Speed@CL3 400 Speed@CL4 533 ...
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... DQS2 Note : Connect; NC, TEST(pin 163)is for bus analysis tool and is not connected on normal memory modules. Pin Description Pin Name CK0,CK1 Clock Inputs, positive line CK0,CK1 Clock Inputs, negative line CKE0,CKE1 Clock Enables RAS Row Address Strobe ...
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... DQS signals are complements, and timing is relative to the crosspoint of DQS0~DQS7 respective DQS and DQS If the module operated in single ended strobe mode, all DQS signals must be tied on the system board to VSS and DDR2 SDRAM mode registers programmed appropriately. ...
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... I/O 8 DQ25 I/O 9 DQ26 I/O 10 DQ27 I/O 11 DQ28 I/O 12 DQ29 I/O 13 DQ30 I/O 14 DQ31 I/O 15 3Ω BA0 - BA1 A0 - A13 RAS CAS WE V SPD DD V REF 512MB, 64Mx64 Module M470T6554CZ3/M470T6554CZ0 CS DQS4 C O LDQS LDQS K D DQS4 LDM DM4 I I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS5 ...
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... DQS3 DM3 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 3Ω BA0 - BA1 A0 - A13 RAS CAS WE V SPD DD V REF 256MB, 32Mx64 Module M470T3354CZ3/M470T3354CZ0 CS DQS4 LDQS O C LDQS D K DQS4 LDM T E DM4 DQ32 I DQ33 I/O 1 DQ34 I/O 2 DQ35 I/O 3 DQ36 ...
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... RAS DDR2 SDRAMs D0 - D15 CAS DDR2 SDRAMs D0 - D15 WE DDR2 SDRAMs D0 - D15 V SPD Serial DDR2 SDRAMs D0 - D15 REF V DDR2 SDRAMs D0 - D15 DDR2 SDRAMs D0 - D15, SPD SS 1GB, 128Mx64 Module M470T2953CZ3/M470T2953CZ0 1 CS DQS4 O C DQS DQS D K DQS4 ...
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Unbuffered SODIMMs Absolute Maximum DC Ratings Symbol Parameter Voltage on V pin relative Voltage on V pin relative DDQ DDQ Voltage on V pin relative DDL ...
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Unbuffered SODIMMs Operating Temperature Condition Symbol TOPER Operating Temperature 1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51.2 standard ...
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Unbuffered SODIMMs IDD Specification Parameters Definition (IDD values are for full operating range of Voltage and Temperature) Symbol Proposed Conditions Operating one bank active-precharge current CK(IDD RC(IDD), t RAS ...
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... IDD3P-S TBD IDD3N TBD IDD4W TBD IDD4R TBD IDD5 TBD IDD6 TBD IDD7 TBD * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap VDD= 1.9V) A 667@CL=5 533@CL=4 CE6 LE6 CD5 LD5 560 480 ...
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... Unbuffered SODIMMs Operating Current Table(1-2) M470T2953CZ3/M470T2953CZ0 : 128Mx64 1GB Module 800@CL=5 Symbol CE7 LE7 IDD0 TBD IDD1 TBD IDD2P TBD IDD2Q TBD IDD2N TBD IDD3P-F TBD IDD3P-S TBD IDD3N TBD IDD4W TBD IDD4R TBD IDD5 TBD IDD6 TBD IDD7 TBD * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap ...
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Unbuffered SODIMMs Electrical Characteristics & AC Timing for DDR2-800/667/533/400 (0 °C < T < 95 °C; V OPER DDQ Refresh Parameters by Device Density Parameter Refresh to active/Refresh command time Average periodic refresh interval Speed Bins and ...
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Unbuffered SODIMMs Parameter DQS input low pulse width tDQSL DQS falling edge to CK setup time tDSS DQS falling edge hold time from CK tDSH Mode register set command cycle time tMRD Write postamble tWPST Write preamble ...
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... Physical Dimensions ± 11.40 0.15 mm ± 16.25 0. FRONT SIDE ± 4.20 0.15 2.70 ± 0.10 1.50 ± 0.10 1.0 ± 0.05 4.00 ± 0.10 The used device is 32M x16 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T51163QC 32Mbx16 based 64Mx64 Module(2 Rank) M470T6554CZ3/M470T6554CZ0 ± 67.60 0.15 mm min 2.00 b 199 ± 47.40 0.15 mm ± 63.00 0.15 mm 200 ± 67.60 0.15 mm DETAIL a BACK SIDE 4.00 ± 0.10 1.0 ± ...
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... Physical Dimensions ± 11.40 0.15 mm ± 16.25 0. FRONT SIDE ± 4.20 0.15 2.70 ± 0.10 1.50 ± 0.10 1.0 ± 0.05 4.00 ± 0.10 The used device is 32M x16 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T51163QC 32Mbx16 based 32Mx64 Module(1 Rank) M470T3354CZ3/M470T3354CZ0 ± 67.60 0.15 mm min 2.00 b 199 ± 47.40 0.15 mm ± 63.00 0.15 mm 200 ± 67.60 0.15 mm DETAIL a BACK SIDE 4.00 ± 0.10 1.0 ± ...
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... FRONT SIDE ± 4.20 0.15 2.70 ± 0.10 1.50 ± 0.10 1.0 ± 0.05 4.00 ± 0.10 The used device is 64M x8 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T51083QC 64Mbx8 based 128Mx64 Module(2 Ranks) M470T2953CZ3/M470T2953CZ0 ± 67.60 0.15 mm min 2.00 SPD b 199 ± 47.40 0.15 mm ± 63.00 0.15 mm 200 ± 67.60 0.15 mm DETAIL a BACK SIDE 4.00 ± 0.10 1.0 ± 0.05 1.80 ± ...
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Unbuffered SODIMMs Revision History Revision 1.0 (Mar. 2005) - Initial Release Revision 1.1 (Mar. 2005) - Changed IDD0/IDD3N/IDD3P current values. - Added Lowpower current values. Revision 1.2 (Aug. 2005) - Changed the IDD Current Values. DDR2 SDRAM ...