M391T6453FGZ3-CE6/D5/CC SAMSUNG [Samsung semiconductor], M391T6453FGZ3-CE6/D5/CC Datasheet - Page 17
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M391T6453FGZ3-CE6/D5/CC
Manufacturer Part Number
M391T6453FGZ3-CE6/D5/CC
Description
DDR2 Unbuffered SDRAM MODULE
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.M391T6453FGZ3-CE6D5CC.pdf
(20 pages)
DQS input low pulse width
DQS falling edge to CK setup time
DQS falling edge hold time from CK
Mode register set command cycle time
Write postamble
Write preamble
Address and control input hold time
Address and control input setup time
Read preamble
Read postamble
Active to active command period for 1KB page size products tRRD
Active to active command period for 2KB page size products tRRD
Four Activate Window for 1KB page size products
Four Activate Window for 2KB page size products
CAS to CAS command delay
Write recovery time
Auto precharge write recovery + precharge time
Internal write to read command delay
Internal read to precharge command delay
Exit self refresh to a non-read command
Exit self refresh to a read command
Exit precharge power down to any non-read command
Exit active power down to read command
Exit active power down to read command
(Slow exit, Lower power)
CKE minimum pulse width
(high and low pulse width)
ODT turn-on delay
ODT turn-on
ODT turn-on(Power-Down mode)
ODT turn-off delay
ODT turn-off
ODT turn-off (Power-Down mode)
ODT to power down entry latency
ODT power down exit latency
OCD drive mode output delay
Minimum time clocks remains ON after CKE asynchronously
drops LOW
256MB, 512MB Unbuffered DIMMs
Parameter
tDQSL
tDSS
tDSH
tMRD
tWPST
tWPRE
tIH
tIS
tRPRE
tRPST
tFAW
tFAW
tCCD
tWR
tDAL
tWTR
tRTP
tXSNR
tXSRD
tXP
tXARD
tXARDS
tCKE
tAOND
tAON
tAONPD
tAOFD
tAOF
tAOFPD
tANPD
tAXPD
tOIT
tDelay
Symbol
tRFC + 10
tAC(min)+
tAC(min)+
tWR+tRP
tAC(min)
tAC(min)
tIS+tCK
6 - AL
0.35
0.35
37.5
+tIH
min
275
200
200
0.2
0.2
0.4
0.9
0.4
7.5
7.5
2.5
10
50
7.5
15
2
2
3
2
2
2
3
8
0
2
2
DDR2-667
tAC(max)+
2tCK+tAC(
tAC(max)+
2.5tCK+tA
C(max)+1
max)+1
max
0.6
1.1
0.6
0.7
2.5
0.6
12
x
x
x
2
x
x
x
x
x
x
x
x
x
x
x
tRFC + 10
tAC(min)+
tAC(min)+
tWR+tRP
tAC(min)
tAC(min)
tIS+tCK
6 - AL
0.35
37.5
min
+tIH
375
250
200
0.2
0.2
0.4
0.35
0.9
0.4
7.5
7.5
7.5
2.5
10
50
15
2
2
2
3
2
2
2
3
8
0
2
DDR2-533
tAC(max)+
2tCK+tAC(
tAC(max)+
tAC(max)+
2.5tCK+
max)+1
max
0.6
1.1
0.6
2.5
0.6
12
2
1
1
x
x
x
x
x
x
x
x
x
x
x
x
x
x
tRFC + 10
tAC(min)+
tAC(min)+
tWR+tRP
tAC(min)
tAC(min)
tIS+tCK
6 - AL
0.35
37.5
+tIH
min
0.35
475
350
200
0.2
0.2
0.4
0.9
0.4
7.5
7.5
2.5
10
50
15
10
2
2
2
3
2
2
2
3
8
0
2
DDR2-400
Rev. 1.3 Aug. 2005
tAC(max)+
tAC(max)+
tAC(max)+
2tCK+tAC
DDR2 SDRAM
(max)+1
2.5tCK+
max
0.6
1.1
0.6
2.5
0.6
12
x
x
x
2
1
1
x
x
x
x
x
x
x
x
x
x
x
Units
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ps
ps
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
14,16,18
14,16,18
Notes
13, 25
9, 10
19
28
28
12
12
23
11
26
24
9