WS128K32V ETC1 [List of Unclassifed Manufacturers], WS128K32V Datasheet - Page 3

• Manufacturer Part Number: WS128K32V
• Description: 128Kx32 3.3V SRAM MULTICHIP PACKAGE
• Manufacturer: ETC1 [List of Unclassifed Manufacturers]

Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current (x 32 Mode)
Standby Current
Output Low Voltage
Output High Voltage
RECOMMENDED OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
V
V
CC
IH
IL
Symbol
T
V
V
T
T
STG
CC
A
G
J
Min
-0.3
3.0
2.2
Min
-0.5
-0.5
-55
-65
(V
I
CC
CC
Sym
V
V
I
I
I
LO
SB
x 32
OH
LI
OL
= 3.3V 0.3V, V
V
CC
Max
+0.8
3.6
+125
+150
Max
+ 0.3
DC CHARACTERISTICS
150
4.6
5.5
V
CS = V
CS = V
CS = V
I
I
OL
OH
IN
= 8mA
= -4.0mA
= GND to V
IH
IL
IH
, OE = V
, OE = V
, OE = V
Unit
Unit
V
V
V
V
C
C
C
SS
V
Conditions
= 0V, T
CC
IH
IH
3
IH
, f = 5MHz
, f = 5MHz
, V
This parameter is guaranteed by design but not tested.
OUT
Parameter
OE capacitance
WE
CS
Data I/O capacitance
Address input capacitance
A
CS
1-4
= -55 C to +125 C)
= GND to V
H
1-4
L
L
L
capacitance
capacitance
HIP (PGA)
CQFP G2T/G1U
OE
H
X
L
X
CC
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WE
H
H
X
L
TRUTH TABLE
CAPACITANCE
Symbol
C
C
C
C
C
WE
OE
(T
Out Disable
CS
I/O
AD
Min
2.4
Standby
A
Mode
Write
Read
= +25 C)
V
V
V
V
V
IN
IN
I/O
IN
IN
= 0 V, f = 1.0 MHz
= 0 V, f = 1.0 MHz
= 0 V, f = 1.0 MHz
= 0 V, f = 1.0 MHz
= 0 V, f = 1.0 MHz
Conditions
WS128K32V-XXX
Data Out
Data I/O
Data In
Max
High Z
High Z
500
0.4
10
10
32
Max
20
20
50
20
20
50
Standby
Units
Active
Active
Active
Power
mA
mA
V
V
A
A
Unit
pF
pF
pF
pF
pF
4