HS9-1840ARH INTERSIL [Intersil Corporation], HS9-1840ARH Datasheet

no-image

HS9-1840ARH

Manufacturer Part Number
HS9-1840ARH
Description
Radiation Hardened 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HS9-1840ARH
Manufacturer:
OKI
Quantity:
17 805
Part Number:
HS9-1840ARH-Q
Manufacturer:
AMCC
Quantity:
101
Radiation Hardened 16 Channel CMOS
Analog Multiplexer with High-Z Analog
Input Protection
Intersil’s Satellite Applications Flow
tested and guaranteed to 100kRAD Total Dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
The HS-1840ARH-T is a Radiation Hardened, monolithic 16
channel multiplexer constructed with the Intersil Rad-Hard
Silicon Gate, Dielectric Isolation process. It is designed to
provide a high input impedance to the analog source if
device power fails (open), or the analog signal voltage
inadvertently exceeds the supply by up to 35V, regardless
of whether the device is powered on or off. Selection of one
of sixteen channels is controlled by a 4-bit binary address
plus an Enable-Inhibit input, which conveniently controls the
ON/OFF operation of several multiplexers in a system. All
inputs have electrostatic discharge protection.
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-1840ARH-T
are contained in SMD 5962-95630. A “hot-link” is provided
from our website for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
Ordering Information
NOTE:
distribution, or 450 units direct.
5962R9563002TXC
HS1-1840ARH/Proto
5962R9563002TYC
HS9-1840ARH/Proto
ORDERING
Minimum order quantity for -T is 150 units through
NUMBER
HS1-1840ARH-T
HS1-1840ARH/Proto
HS9-1840ARH-T
HS9-1840ARH/Proto
1
NUMBER
PART
TM
Data Sheet
(SAF) devices are fully
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
-55 to 125
-55 to 125
-55 to 125
-55 to 125
RANGE
TEMP.
(
o
C)
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
• Improved r
• Improved Access Time 1.5 s (Max) Over Temp and Rad
• High Analog Input Impedance 500M During Power Loss
• Excellent in Hi-Rel Redundant Systems
• Break-Before-Make Switching
Pinouts
(+5V
www.intersil.com or 407-727-9207
- Gamma Dose ( ) 1 x 10
- No Latch-Up, Dielectrically Isolated Device Islands
(Open)
35V Input Over Voltage Protection (Power On or Off)
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.
ADDR A3
S
) V
IN 16
IN 15
IN 14
IN 13
IN 12
IN 11
IN 10
GND
+V
IN 9
REF
NC
NC
(+5V
S
HS9-1840ARH-T (FLATPACK) CDFP3-F28
ADDR A3
HS1-1840ARH-T (SBDIP), CDIP2-T28
DS(ON)
S
July 1999
) V
IN 16
IN 15
IN 14
IN 13
IN 12
IN 11
IN 10
GND
+V
IN 9
REF
NC
NC
S
Linearity
10
11
12
13
14
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
TOP VIEW
TOP VIEW
5
|
RAD(Si)
HS-1840ARH-T
Copyright
File Number 4589.1
28
27
26
25
24
23
22
21
20
19
18
17
16
15
©
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Intersil Corporation 1999
OUT
-V
IN 8
IN 7
IN 6
IN 5
IN 4
IN 3
IN 2
IN 1
ENABLE
ADDR A0
ADDR A1
ADDR A2
S
OUT
-V
IN 8
IN 7
IN 6
IN 5
IN 4
IN 3
IN 2
IN 1
ENABLE
ADDR A0
ADDR A1
ADDR A2
S

Related parts for HS9-1840ARH

HS9-1840ARH Summary of contents

Page 1

... Break-Before-Make Switching Pinouts HS1-1840ARH-T (SBDIP), CDIP2-T28 + GND (+ REF ADDR A3 HS9-1840ARH-T (FLATPACK) CDFP3-F28 TEMP. RANGE + -55 to 125 IN 16 -55 to 125 -55 to 125 IN 13 -55 to 125 ...

Page 2

Functional Diagram DIGITAL ADDRESS ...

Page 3

Die Characteristics DIE DIMENSIONS: (2820 m x 4080 m x 483 m 25.4 m) 111 x 161 x 19mils 1mil METALLIZATION: Type Å Å Thickness: 16.0k 2k SUBSTRATE POTENTIAL: Unbiased (DI) BACKSIDE FINISH: Silicon Metallization Mask Layout ...

Related keywords