ACE2301B ACE [ACE Technology Co., LTD.], ACE2301B Datasheet
ACE2301B
Related parts for ACE2301B
ACE2301B Summary of contents
Page 1
... Description ACE2301B is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package with excellent thermal and electrical capabilities. ...
Page 2
... Ordering information ACE2301B Halogen - free Pb - free BM : SOT-23-3 Electrical Characteristics O T =25 C unless otherwise noted A Parameter Drain-Source Breakdown Voltage Drain Cut-off Current Gate-Source Leakage Current Drain-Source On-state Resistance Gate Threshold Voltage Forward Transconductance Turn-On Delay Time Turn-Off Delay Time Input Capacitance ...
Page 3
... Typical Performance Characteristics ACE2301B P-Channel Enhancement Mode MOSFET VER 1.3 3 ...
Page 4
... Packing Information SOT-23-3 P-Channel Enhancement Mode MOSFET Unit: mm ACE2301B VER 1.3 4 ...
Page 5
... A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system affect its safety or effectiveness. P-Channel Enhancement Mode MOSFET Notes ACE Technology Co., LTD. http://www.ace-ele.com/ ACE2301B VER 1.3 5 ...