M366S1623ET0 SAMSUNG [Samsung semiconductor], M366S1623ET0 Datasheet
M366S1623ET0
Related parts for M366S1623ET0
M366S1623ET0 Summary of contents
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... M366S1623ET0 Revision History Revision 0.0 (Dec, 2000) • PC133 first published. PC133 Unbuffered DIMM REV. 0.0 Dec, 2000 ...
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... GENERAL DESCRIPTION The Samsung M366S1623ET0 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S1623ET0 consists of sixteen CMOS bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM ...
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... M366S1623ET0 PIN CONFIGURATION DESCRIPTION Pin Name CLK System clock CS Chip select CKE Clock enable A0 ~ A11 Address BA0 ~ BA1 Bank select address RAS Row address strobe CAS Column address strobe WE Write enable DQM0 ~ 7 Data input/output mask DQ0 ~ 63 Data input/output V /V Power supply/ground ...
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... M366S1623ET0 FUNCTIONAL BLOCK DIAGRAM CS1 CS0 DQM0 DQM CS DQ0 DQ0 DQ1 DQ1 DQ2 DQ2 U0 DQ3 DQ3 DQ4 DQ4 DQ5 DQ5 DQ6 DQ6 DQ7 DQ7 DQM1 DQM CS DQ8 DQ0 DQ9 DQ1 DQ10 DQ2 U1 DQ11 DQ3 DQ12 DQ4 DQ13 DQ5 DQ14 DQ6 DQ15 ...
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... M366S1623ET0 ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. ...
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... M366S1623ET0 DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, T Parameter Symbol Operating current I CC1 (one Bank Active) I CC2 Precharge standby current in power-down mode I CC2 I CC2 Precharge standby current in non power-down mode I CC2 I CC3 Active standby current in power-down mode I CC3 I CC3 Active standby current in ...
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... M366S1623ET0 AC OPERATING TEST CONDITIONS Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Output 870 (Fig output load circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter ...
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... M366S1623ET0 AC CHARACTERISTICS (AC operating conditions unless otherwise noted) REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE. Parameter CLK cycle time CAS latency=3 CLK to valid CAS latency=3 output delay Output data CAS latency=3 hold time CLK high pulse width CLK low pulse width ...
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... M366S1623ET0 SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self refresh Bank active & row addr. Auto precharge disable Read & column address Auto precharge enable Auto precharge disable Write & column address Auto precharge enable Burst stop ...
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... M366S1623ET0 PACKAGE DIMENSIONS 0.118 (3.000) A .118DIA 0.004 (3.000DIA 0.100) 0.350 (8.890) .450 (11.430) 0.250 (6.350) 0.123 0.005 (3.125 0.125) 0.079 0.004 (2.000 0.100) Detail A Tolerances : 0.005(.13) unless otherwise specified The used device is 8Mx8 SDRAM, TSOP SDRAM Part No. : K4S640832E-TC75 5.250 (133.350) 5.014 (127 ...
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... M366S1623ET0 M366S1623ET0-C75(Intel SPD 1.2B ver. base) Organization : 16Mx64 ¡Ü Composition : 8Mx8 *16 ¡Ü Used component part # : K4S640832E-TC75 ¡Ü rows in module : 2 rows ¡Ü banks in component : 4 banks ¡Ü Feature : 1,375mil height & double sided component ¡Ü Refresh : 4K/64ms ¡Ü ...
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... M366S1623ET0 Byte # Function Described 35 Data signal input hold time 36 Superset information (maybe used in future) 37~60 Superset information (maybe used in future) 61 Superset information (maybe used in future) 62 SPD data revision code 63 Checksum for bytes Manufacturer JEDEC ID code 65~71 ...... Manufacturer JEDEC ID code 72 Manufacturing location 73 Manufacturer part # (Memory module) ...