M366S1723DTS-C SAMSUNG [Samsung semiconductor], M366S1723DTS-C Datasheet - Page 5
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M366S1723DTS-C
Manufacturer Part Number
M366S1723DTS-C
Description
PC133/PC100 Unbuffered DIMM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.M366S1723DTS-C.pdf
(11 pages)
Notes :
(Recommended operating condition unless otherwise noted, T
DC CHARACTERISTICS
M366S1723DTS
Operating current
(One bank active)
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC2
CC3
I
CC2
CC3
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
P
N
P
N
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4Banks activated
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
(min)
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
= 10ns
= 10ns
A
V
V
= 0 to 70 C)
V
V
IH
IH
IH
CC
CC
IL
IL
(min), t
(min), t
/V
(max), t
(max), t
IL
=
=
=V
DDQ
CC
CC
PC133/PC100 Unbuffered DIMM
CC
CC
= 10ns
= 10ns
/V
=
=
SSQ
)
C
L
1760
- 7C
800
880
1600
-7A
720
880
Version
Rev. 0.1 Sept. 2001
160
240
200
6.4
16
16
80
40
40
16
1520
-1H
720
800
1520
720
800
-1L
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
1
1
2