K9F4008W0A-TIB0 SAMSUNG [Samsung semiconductor], K9F4008W0A-TIB0 Datasheet - Page 13

• Manufacturer Part Number: K9F4008W0A-TIB0
• Description: 512K x 8 bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

I/O
ALE
CE
RE
R/B
K9F4008W0A-TCB0, K9F4008W0A-TIB0
* Input Data Latch Cycle
CLE
CE
WE
I/O
* Burst Read Cycle After Frame Access
0
0
~
~
7
7
t
ALS
t
RR
t
NOTES : Transition is measured 200mV from steady state voltage with load.
WP
t
DS
DIN 0
t
t
WC
REA
t
This parameter is sampled and not 100% tested.
DH
t
RP
t
WH
Dout
t
RC
t
REH
t
(CLE=L, WE=H, ALE=L)
WP
t
DS
DIN 1
t
REA
13
t
DH
Dout
t
RHZ
t
WP
DIN 31
t
DS
t
DH
t
CH
t
t
CLH
REA
FLASH MEMORY
Dout
t
t
RHZ*
RHZ*