PDM41028LA10SO ETC1 [List of Unclassifed Manufacturers], PDM41028LA10SO Datasheet

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PDM41028LA10SO

Manufacturer Part Number
PDM41028LA10SO
Description
1 Megabit Static RAM 256K x 4-Bit
Manufacturer
ETC1 [List of Unclassifed Manufacturers]
Datasheet
Features
n
n
n
n
n
Functional Block Diagram
Rev. 2.2 - 4/29/98
High speed access times
Com’l: 10, 12 and 15 ns
Ind’l: 12 and 15 ns
Low power operation (typical)
- PDM41028SA
- PDM41028LA
Single +5V ( 10%) power supply
TTL-compatible inputs and outputs
Packages
Plastic SOJ (300 mil) - TSO
Plastic SOJ (400 mil) - SO
Active: 400 mW
Standby: 150 mW
Active: 350 mW
Standby: 100 mW
Addresses
WE
CE
OE
I/O
I/O
I/O
I/O
0
1
2
3
A
A
17
0
Decoder
Input
Data
Control
Description
The PDM41028 is a high-performance CMOS static
RAM organized as 262,144 x 4 bits. Writing to this
device is accomplished when the write enable (WE)
and the chip enable (CE) inputs are both LOW.
Reading is accomplished when WE remains HIGH
and CE and OE are both LOW.
The PDM41028 operates from a single +5V power
supply and all the inputs and outputs are fully TTL-
compatible. The PDM41028 comes in two versions,
the standard power version PDM41028SA and a low
power version the PDM41028LA. The two versions
are functionally the same and only differ in their
power consumption.
The PDM41028 is available in a 28-pin 300-mil SOJ,
and a 28-pin 400-mil SOJ for surface mount
applications.
Column I/O
Memory
Matrix
• • • • •
1 Megabit Static RAM
PDM41028
256K x 4-Bit
1
10
11
12
1
2
3
4
5
6
7
8
9

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PDM41028LA10SO Summary of contents

Page 1

Features High speed access times n Com’l: 10, 12 and 15 ns Ind’l: 12 and 15 ns Low power operation (typical PDM41028SA Active: 400 mW Standby: 150 mW - PDM41028LA Active: 350 mW Standby: 100 mW Single +5V ...

Page 2

Pin Configuration SOJ Vcc A10 A11 A12 A1 A13 A14 20 NC A15 9 19 ...

Page 3

Recommended DC Operating Conditions Symbol Parameter V Supply Voltage CC V Supply Voltage SS Industrial Ambient Temperature Commercial Ambient Temperature DC Electrical Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO V Input Low Voltage IL ...

Page 4

Capacitance Symbol Parameter C Input Capacitance IN C Output Capacitance OUT NOTE:1. This parameter is determined by device characterization but is not production tested. AC Test Conditions Input pulse levels Input rise and fall times Input timing reference levels Output ...

Page 5

Read Cycle No. 1 ADDR D OUT ( Read Cycle No. 2 ADDR OUT AC Electrical Characteristics Description READ Cycle READ cycle time Address access time Chip enable access time Output hold from ...

Page 6

Write Cycle No. 1 (Write Enable Controlled) ADDR HIGH-Z D OUT Write Cycle No. 2 (Write Enable Controlled) ADDR OUT NOTE: Output Enable (OE) is inactive (high) Write Cycle No. 3 ...

Page 7

AC Electrical Characteristics Description WRITE Cycle WRITE Cycle time Chip enable active time Address Valid to end of write Address setup time Address hold from end of write Write pulse width Write pulse width Data setup time Data hold time ...

Page 8

Ordering Information XXXXX X XX Speed Device Type Power Package Process Preferred Type Temp. Range Shipping Container Faster Memories for a Faster World ™ PDM41028 Blank Tubes TR Tape & Reel TY Tray Blank Commercial (0 ...

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