HX6228ASNT HONEYWELL [Honeywell Solid State Electronics Center], HX6228ASNT Datasheet

HX6228ASNT

Manufacturer Part Number

HX6228ASNT

Description

128K x 8 STATIC RAM-SOI HX6228

Manufacturer

HONEYWELL [Honeywell Solid State Electronics Center]

Datasheet

1.HX6228ASNT.pdf (12 pages)

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Military & Space Products

128K x 8 STATIC RAM—SOI

FEATURES

RADIATION

• Fabricated with RICMOS™ IV Silicon on Insulator (SOI)

• Total Dose Hardness through 1x10

• Neutron Hardness through 1x10

• Dynamic and Static Transient Upset Hardness

• Dose Rate Survivability through <1x10

• Soft Error Rate of <1x10

• No Latchup

GENERAL DESCRIPTION

The 128K x 8 Radiation Hardened Static RAM is a high

performance 131,072 word x 8-bit static random access

memory with industry-standard functionality. It is fabricated

with Honeywell’s radiation hardened technology, and is

designed for use in systems operating in radiation environ-

ments. The RAM operates over the full military temperature

range and requires only a single 5 V ± 10% power supply. The

RAM is wire bond programmable for either TTL or CMOS

compatible I/O. Power consumption is typically less than 25

mW/MHz in operation, and less than 5 mW in the low power

disabled mode. The RAM read operation is fully asynchro-

nous, with an associated typical access time of 15 ns at 5V.

Honeywell’s enhancedSOI RICMOS™IV (Radiation Insen-

sitive CMOS) technology is radiation hardened through the

use of advanced and proprietary design, layout and process

hardening techniques. The RICMOS™ IV process is an

advanced 5-volt, SIMOX CMOS technology with a 150 Å

gate oxide and a minimum feature size of 0.7 µm (0.55 µm

effective gate length—L

Honeywell’s proprietary SHARP planarization process, and

a lightly doped drain (LDD) structure for improved short

channel reliability. A 7 transistor (7T) memory cell is used for

superior single event upset hardening, while three layer

metal power bussing and the low collection volume SIMOX

substrate provide improved dose rate hardening.

0.7 µm Process (L

through 1x10

Geosynchronous Orbit

rad (Si)/s

eff

= 0.55 µm)

eff

-10

). Additional features include

upsets/bit-day in

rad(SiO

-2

rad(Si)/s

)

OTHER

• Read/Write Cycle Times

• Typical Operating Power <25 mW/MHz

• Asynchronous Operation

• CMOS or TTL Compatible I/O

• Single 5 V ± 10% Power Supply

• Packaging Options

≤ 16 ns (Typical)

≤ 25 ns (-55 to 125°C)

- 32-Lead Flat Pack (0.820 in. x 0.600 in.)

- 40-Lead Flat Pack (0.775 in. x 0.710 in.)

HX6228

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