TFP50N06 TAK_CHEONG [Tak Cheong Electronics (Holdings) Co.,Ltd], TFP50N06 Datasheet

TFP50N06

Manufacturer Part Number

TFP50N06

Description

N-Channel Power MOSFET 50A, 60V, 0.023?

Manufacturer

TAK_CHEONG [Tak Cheong Electronics (Holdings) Co.,Ltd]

Datasheet

1.TFP50N06.pdf (8 pages)

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N-Channel Power MOSFET

50A, 60V, 0.023Ω

GENERAL DESCRIPTION

FEATURES

ABSOLUTE MAXIMUM RATINGS

Notes:

1. L=300uH, I

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. I

THERMAL CHARACTERISTICS

Number: DB-228

August 2011, Revision A

Symbol

●

This N-Channel MOSFET is used an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. This advanced

technology has been especially tailored to minimize on-state

resistance, provide superior switching performance. This

device is well suited for high efficiency switched mode power

suppliers, active power factor correction, electronic lamp

ballasts based half bridge topology.

Symbol

θJC

θJA

≤ 50A, di/dt ≤ 300A/us, V

V GSS

V DSS

E AR

dv/dt

E AS

T stg

I DM

Avalanche energy specified

Gate Charge (Typical 36nC)

High Ruggedness

P D

T J

I D

TAK CHEONG

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

=50A, V

Operating Junction Temperature

Storage Temperature Range

Drain- Source Voltage

Gate-Source Voltage

Drain Current

Drain Current Pulsed

Power Dissipation

Derating Factor above 25℃

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

=25V, R

≤ BV

=50Ω, Starting T

DSS

Parameter

, Starting T

(

=25°C

, unless otherwise

=25℃.

(Note 3)

(Note 2)

(Note 1)

noted

)

- 55 to +150

Value

±25

1.25

62.5

200

120

642

150

0.8

7.0

DEVICE MARKING DIAGRAM

L xxyy

TFP

XXXX

TO-220AB

SEM ICON DU CTO R

L = Tak Cheong Logo

xxyy = Monthly Date Code

TFPXXXX = Device Type

1 = Gate

2 = Drain

3 = Source

Units

W/℃

℃/W

V/ns

Unit

℃

Page 1

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TFP50N06 Summary of contents

Page 1

TAK CHEONG N-Channel Power MOSFET 50A, 60V, 0.023Ω GENERAL DESCRIPTION This N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, ...

Page 2

TAK CHEONG ELECTRICAL CHARACTERISTICS Off Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter BV Drain-Sounce Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse GSSR On ...

Page 3

TAK CHEONG TYPICAL CHARACTERISTICS Number: DB-228 August 2011, Revision A ® SEM ICON DU CTO R Page 3 ...

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TAK CHEONG Number: DB-228 August 2011, Revision A ® SEM ICON DU CTO R Page 4 ...

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TAK CHEONG Number: DB-228 August 2011, Revision A ® SEM ICON DU CTO R Page 5 ...

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TAK CHEONG Number: DB-228 August 2011, Revision A ® SEM ICON DU CTO R Page 6 ...

Page 7

TAK CHEONG TO220AB PACKAGE OUTLINE Number: DB-228 August 2011, Revision A ® MILLIMETERS DIM MIN A 3.60 A1 1.20 A2 2.03 b 0.40 b2 1.20 c 0.36 D 14.22 e 2.34 E 9.70 H1 5.84 L 12.70 L1 2.70 ØP ...

Page 8

TAK CHEONG The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ...

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