KMM366S403CTL SAMSUNG [Samsung semiconductor], KMM366S403CTL Datasheet
KMM366S403CTL
Related parts for KMM366S403CTL
KMM366S403CTL Summary of contents
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... KMM366S403CTL Revision History Revision .3 (Mar. 1998) •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : 5uA to 1uA. - Input leakage currents (I/O) : 5uA to 1.5uA. - Cin to be measured 3.3V Operating Condition is changed as defined : V (max) = 5.6V AC. The overshoot voltage duration is 3ns. ...
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... GENERAL DESCRIPTION The Samsung KMM366S403CTL bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S403CTL consists of sixteen CMOS bit Syn- chronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.33uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM ...
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... KMM366S403CTL PIN CONFIGURATION DESCRIPTION Pin Name CLK System clock CS Chip select CKE Clock enable A0 ~ A10/AP Address BA0 Bank select address RAS Row address strobe CAS Column address strobe WE Write enable DQM0 ~ 7 Data input/output mask DQ0 ~ 63 Data input/output V /V Power supply/ground DD SS Input Function Active on the positive going edge to sample all inputs ...
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... KMM366S403CTL FUNCTIONAL BLOCK DIAGRAM CS1 CS0 DQM0 DQM CS DQ0 DQ0 DQ1 DQ1 DQ2 DQ2 U0 DQ3 DQ3 DQ4 DQ4 DQ5 DQ5 DQ6 DQ6 DQ7 DQ7 DQM1 DQM CS DQ8 DQ0 DQ9 DQ1 DQ10 DQ2 U1 DQ11 DQ3 DQ12 DQ4 DQ13 DQ5 DQ14 DQ6 DQ15 ...
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... KMM366S403CTL ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Notes : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. ...
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... KMM366S403CTL DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, T Parameter Symbol Operating current I CC1 (One bank active CC2 Precharge standby current in power-down mode I PS CC2 I N CC2 Precharge standby current in non power-down mode I NS CC2 I P CC3 Active standby current in power-down mode ...
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... KMM366S403CTL AC OPERATING TEST CONDITIONS Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition 3.3V 1200 Output 50pF 870 (Fig output load circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) ...
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... KMM366S403CTL AC CHARACTERISTICS (AC operating conditions unless otherwise noted) REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE. Parameter CAS latency=3 CLK cycle time CAS latency=2 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=3 Output data hold time CAS latency=2 CLK high pulse width ...
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... KMM366S403CTL FREQUENCY vs. AC PARAMETER RELATIONSHIP TABLE KMM366S403CTL-G0 CAS Frequency Latency 100MHz (10.0ns) 3 83MHz (12.0ns) 3 75MHz (13.0ns) 2 66MHz (15.0ns) 2 60MHz (16.7ns RAS RP RRD 80ns 50ns 26ns 20ns PC66 SDRAM MODULE ...
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... KMM366S403CTL SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self refresh Exit Bank active & row addr. Auto precharge disable Read & column address Auto precharge enable Auto precharge disable Write & column address Auto precharge enable ...
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... KMM366S403CTL PACKAGE DIMENSIONS 0.118 (3.000) A .118DIA 0.004 (3.000DIA 0.100) 0.350 (8.890) .450 (11.430) 0.250 (6.350) 0.123 0.005 (3.125 0.125) 0.079 0.004 (2.000 0.100) Detail A Tolerances : 0.005(.13) unless otherwise specified The used device is 2Mx8 SDRAM, TSOP SDRAM Part No. : KM48S2020CT 5.250 (133.350) 5.014 (127 ...