KMM5324000BSW SAMSUNG [Samsung semiconductor], KMM5324000BSW Datasheet - Page 5

• Manufacturer Part Number: KMM5324000BSW
• Description: 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
• Manufacturer: SAMSUNG [Samsung semiconductor]

DRAM MODULE
AC CHARACTERISTICS
Test condition : V
NOTES
Fast page mode cycle time
CAS precharge time(Fast page cycle)
RAS pulse width(Fast page cycle)
W to RAS precharge time(C-B-R refresh)
W to RAS hold time(C-B-R refresh)
1.
2.
3.
4.
5.
An initial pause of 200us is required after power-up followed
by any 8 RAS-only or CAS-before-RAS refresh cycles before
proper device operation is achieved.
Input voltage levels are V
erence levels for measuring timing of input signals. Transi-
tion times are measured between V
are assumed to be 5ns for all inputs.
Measured with a load equivalent to 2 TTL loads and 100pF.
Operation within the
can be met.
If
access time is controlled exclusively by
Assumes that
t
RCD
is greater than the specified
ih
/V
t
RCD
il
Parameter
t
=2.6/0.8V, V
RCD
(max) is specified as a reference point only.
t
RCD
t
RCD
(max).
ih
(max) limit insures that
/V
oh
(0 C T
il
/V
. V
ol
IH
=2.4/0.4V, output loading CL=100pF
(min) and V
A
IH
(min) and V
70 C, V
t
RCD
t
CAC
(max) limit, then
.
IL
CC
(max) are ref-
t
t
t
t
t
PC
CP
RASP
WRP
WRH
IL
Symbol
=5.0V 10%. See notes 1,2.)
(max) and
t
RAC
(max)
10.
Min
6.
7.
8.
9.
35
10
50
10
10
This parameter defines the time at which the output achieves
the open circuit condition and is not referenced to V
V
t
the data sheet as electrical characteristics only. If
t
data out pin will remain high impedance for the duration of
the cycle.
Either
These parameters are referenced to the CAS leading edge in
early write cycles.
Operation within the
can be met.
t
access time is controlled by
WCS
WCS
RAD
OL
-5
.
is non-restrictive operating parameter. It is included in
is greater than the specified
t
t
WCS
RCH
200K
Max
(min), the cycle is an early write cycle and the
or
KMM5324000BSW/BSWG
t
RAD
t
RRH
(max) is specified as reference point only. If
must be satisfied for a read cycle.
Min
40
10
60
10
10
t
RAD
(max) limit insures that
-6
t
AA
.
200K
Max
t
RAD
(max) limit, then
Unit
ns
ns
ns
ns
ns
t
RAC
Note
OH
(max)
or