LP1500 FILTRONIC [Filtronic Compound Semiconductors], LP1500 Datasheet
LP1500
Manufacturer Part Number
LP1500
Description
1W POWER PHEMT
Manufacturer
FILTRONIC [Filtronic Compound Semiconductors]
Datasheet
1.LP1500.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LP1500-SOT89
Manufacturer:
FILTRONIC
Quantity:
20 000
Part Number:
LP1500SOT89
Manufacturer:
RFMD
Quantity:
20 000
Phone: (408) 988-1845
Fax: (408) 970-9950
FEATURES
DESCRIPTION AND APPLICATIONS
The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25
minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have
been optimized for reliable high-power applications. The LP1500 also features Si
and is available in a P100 flanged ceramic package and in the low cost plastic SOT89 package.
Typical applications include commercial and other narrowband and broadband high-performance
amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output
amplifiers, and medium-haul digital radio transmitters.
ELECTRICAL SPECIFICATIONS @ T
frequency=18 GHz
Power Gain at 1-dB Compression
Maximum Drain-Source Current
Saturated Drain-Source Current
Gate-Source Leakage Current
31.5 dBm Output Power at 1-dB Compression at 18 GHz
8 dB Power Gain at 18 GHz
28 dBm Output Power at 1-dB Compression at 3.3V
45dBm Output IP3 at 18GHz
50% Power-Added Efficiency
Power at 1-dB Compression
Output Third Intercept Point
Power-Added Efficiency
Gate-Source Breakdown
Gate-Drain Breakdown
Thermal Resistivity
Voltage Magnitude
Voltage Magnitude
Pinch-Off Voltage
Transconductance
Parameter
m by 1500
m Schottky barrier gate. The recessed “mushroom” gate structure
Symbol
|V
|V
G-1dB
P-1dB
I
PAE
I
I
IP3
MAX
BDGD
G
GSO
BDGS
DSS
V
M
JC
P
|
|
http:// www.filss.com
V
V
V
V
DS
DS
DS
DS
Ambient
V
V
V
V
DS
DS
DS
DS
= 8 V; I
= 8 V; I
= 8 V; I
= 8 V; I
Test Conditions
= 2 V; I
= 2 V; V
= 2 V; V
= 2 V; V
I
V
I
GD
GS
GS
= 25° ° C
= 8 mA
= 8 mA
= -5 V
DS
DS
DS
DS
DS
= 50% I
= 50% I
= 50% I
= 50% I
GS
GS
GS
= 5 mA
= 0 V
= 1 V
= 0 V
DSS
DSS
DSS
DSS
PAD (2X)
PAD (2X)
PAD (2x)
SOURCE
DRAIN
BOND
BOND
BOND
GATE
DIE SIZE: 16.5X16.1 mils (420x410 m)
DIE THICKNESS: 3 mils (75 m)
BONDING PADS: 1.9X2.4 mils (50x60 m)
-0.25
Min
375
385
-12
-12
30
6
1W P
Revised: 1/18/01
Email: sales@filss.com
Typ
31.5
490
925
450
-1.2
-15
-16
45
50
10
45
8
LP1500
OWER
3
N
Max
4
600
-2.0
75
passivation
PHEMT
Units
dBm
dBm
mA
mA
C/W
mS
dB
%
V
V
V
A
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LP1500 Summary of contents
Page 1
... Output Power at 1-dB Compression at 3.3V 45dBm Output IP3 at 18GHz 50% Power-Added Efficiency DESCRIPTION AND APPLICATIONS The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct- write 0. 1500 minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications ...
Page 2
... TOT DC IN OUT Bias Power Input Power Output Power OUT P = 3.33W – (0.022W TOT HS where T = heatsink or ambient temperature. HS http:// www.filss.com LP1500 1W P OWER Min Max 12 -5 2xI DSS 15 750 175 — -65 175 3.33 Revised: 1/18/01 Email: sales@filss.com PHEMT Units V ...