CM600HA-5F_00 MITSUBISHI [Mitsubishi Electric Semiconductor], CM600HA-5F_00 Datasheet - Page 4

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CM600HA-5F_00

Manufacturer Part Number
CM600HA-5F_00
Description
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
Manufacturer
MITSUBISHI [Mitsubishi Electric Semiconductor]
Datasheet
10
10
10
10
10
-1
-2
-3
1
0
10
-3
Single Pulse
T
Per Unit Base = R
C
IMPEDANCE CHARACTERISTICS
= 25 C
10
TRANSIENT THERMAL
-2
(IGBT)
TIME, (s)
th(j-c)
10
-1
= 0.13 C/W
10
0
10
1
10
10
10
10
10
-1
-2
-3
1
0
10
-3
Single Pulse
T
Per Unit Base = R
C
IMPEDANCE CHARACTERISTICS
= 25 C
10
TRANSIENT THERMAL
-2
(FWDi)
TIME, (s)
th(j-c)
10
-1
= 0.19 C/W
10
0
10
1
HIGH POWER SWITCHING USE
MITSUBISHI IGBT MODULES
CM600HA-5F
INSULATED TYPE
Sep.2000

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