F2012 Polyfet RF Devices, F2012 Datasheet
F2012
Manufacturer Part Number
F2012
Description
Manufacturer
Polyfet RF Devices
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
F2012
Manufacturer:
POLYFET
Quantity:
20 000
General Description
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
SYMBOL
SYMBOL
VSWR
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Gps
Ciss
Crss
Coss
Total
Device
Dissipation
40 Watts
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
Silicon VDMOS and LDMOS
"Polyfet"
Common Source Power Gai
Drain Efficiency
Load Mismatch Toleranc
PARAMETER
PARAMETER
Drain Breakdown Voltag
Zero Bias Drain Curren
Gate Leakage Curren
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
Saturation Curren
Common Source Input Capacitanc
Common Source Feedback Capacitanc
t
Common Source Output Capacitanc
TM
Junction to
Case Thermal
Resistance
polyfet rf devices
process features
4.2
o
C/W
Maximum
Junction
Temperature
RF CHARACTERISTICS (
200
ELECTRICAL CHARACTERISTICS (EACH SIDE)
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
o
C
-65
Storage
Temperature
MIN
MIN
POLYFET RF DEVICES
o
10
C
1
65
to 150
TYP
TYP
o
0.8
4.8
36
24
C
45
1
4
10
DC Drain
Current
MAX
MAX
20:1
0.8
3.2 A
WATTS OUTPUT )
1
7
SILICON GATE ENHANCEMENT MODE
Relative
UNITS
UNITS
Ohm
Amp
Mho
dB
mA
%
RF POWER
uA
pF
pF
pF
V
V
HIGH EFFICIENCY, LINEAR,
PATENTED GOLD METALIZED
HIGH GAIN, LOW NOISE
Drain to
Gate
Voltage
Idq =
Idq =
Idq =
70
10 Watts Single Ended
TEST CONDITIONS
TEST CONDITIONS
o
Package Style AP
Ids =
Vds =
Vds = 0 V,
Ids =
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 4
Vgs = 20V, Vds = 10V
Vds =
Vds =
Vds =
V
0.8
0.8
0.8
0.08
0.04
28.0
A,
A,
A,
28.0
28.0
28.0
VDMOS TRANSISTOR
Vds =
Vds =
Vds =
A,
A,
V,
V, Vgs = 0V, F = 1 MHz
V, Vgs = 0V, F = 1 MHz
V, Vgs = 0V, F = 1 MHz
Drain to
Source
Voltage
70
REVISION
Vgs = 0V
Vgs = 0V
Vgs = 30V
Vgs = Vds
28.0
28.0
28.0
V
A
V,
V,
V,
F2012
F = 1000 MHz
F = 1000 MHz
F = 1000 MHz
Gate to
Source
Voltage
8/1/97
30V
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