LP750 Filtronic, LP750 Datasheet

LP750

Manufacturer Part Number

LP750

Description

Manufacturer

Filtronic

Datasheets

1.LP750.pdf (2 pages)

2.LP750.pdf (2 pages)

Specifications of LP750

Case

SOT892

Date_code

07-0303

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

LP750SOT89

Manufacturer:

FILTRONIC

Quantity:

20 000

Current page: 1 of 2
Download datasheet (35Kb)

Phone: (408) 988-1845

Fax: (408) 970-9950

FEATURES

DESCRIPTION AND APPLICATIONS

The LP750 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)

Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-

write 0.25 m by 750 m Schottky barrier gate. The recessed “mushroom” gate structure minimizes

parasitic gate-source and gate resistances.

optimized for reliable high-power applications. The LP750 also features Si

available in a variety of packages, including SOT89 and P100 packages.

Typical applications include commercial and other types of high-performance power amplifiers,

including use within SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output

amplifiers, and medium-haul digital radio transmitters.

ELECTRICAL SPECIFICATIONS @ T

frequency=18 GHz

Power Gain at 1-dB Compression

Maximum Drain-Source Current

Saturated Drain-Source Current

Gate-Source Leakage Current

28 dBm Output Power at 1-dB Compression at 18 GHz

10 dB Power Gain at 18 GHz

24 dBm Output Power at 1-dB Compression at 3.3V

55% Power-Added Efficiency

Power at 1-dB Compression

Power-Added Efficiency

Gate-Source Breakdown

Gate-Drain Breakdown

Thermal Resistivity

Voltage Magnitude

Pinch-Off Voltage

Transconductance

Parameter

Symbol

G-1dB

P-1dB

PAE

MAX

BDGD

GSO

BDGS

DSS

http:// www.filss.com

Ambient

The epitaxial structure and processing have been

= 8 V; I

Test Conditions

= 2 V; I

= 2 V; V

= 10 dBm

= 25°C

= 4 mA

= -3 V

= 50% I

= 4 mA

= 0 V

= 1 V

= 0 V

DSS

SOURCE

PAD (2x)

BOND

GATE

;

PAD

BOND

DRAIN

BOND

PAD

DIE SIZE: 12.6X16.9 mils (320x430 m)

DIE THICKNESS: 3 mils (75 m)

BONDING PADS: 3.3X2.4 mils (85x60 m)

-0.25

Min

26.5

180

-12

0.5 W P

Revised: 2/26/01

Email: sales@filss.com

Typ

225

400

230

-1.2

-15

-16

passivation and is

OWER

LP750

Max

265

-2.0

PHEMT

Units

dBm

C/W

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