IRFU3706CPBF IRF [International Rectifier], IRFU3706CPBF Datasheet

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IRFU3706CPBF

Manufacturer Part Number
IRFU3706CPBF
Description
SMPS MOSFET
Manufacturer
IRF [International Rectifier]
Datasheet
Benefits
l
l
l
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
l
l
l
Applications
Notes  through
R
R
R
Symbol
V
V
I
I
I
P
P
T
D
D
DM
J
DS
GS
D
D
θJC
θJA
θJA
When mounted on 1" square PCB (FR-4 or G-10 Material) .
and Current
@ T
@ T
, T
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V V
Fully Characterized Avalanche Voltage
Converters with Synchronous Rectification
for Telecom and Industrial Use
@T
@T
High Frequency Isolated DC-DC
High Frequency Buck Converters for
Lead-Free
Computer Processor Power
For recommended footprint and soldering techniques refer to application note #AN-994
STG
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Linear Derating Factor
Gate-to-Source Voltage
are on page 10
Parameter
Parameter
GS

SMPS MOSFET
GS
GS
ƒ
ƒ
@ 10V
@ 10V
V
20V
DSS
IRFR3706CPbF
D-Pak
Typ.
–––
–––
–––
HEXFET Power MOSFET
-55 to + 175
R
DS(on)
Max.
± 12
0.59
280
75
53
20
88
44
9.0mΩ
IRFR3706CPbF
IRFU3706CPbF
Max.
max
110
1.7
50
IRFU3706CPbF
I-Pak
75A
mW/°C
Units
Units
°C/W
°C
I
W
W
V
A
V
D
1

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IRFU3706CPBF Summary of contents

Page 1

... GS @ 10V GS @ 10V GS  ƒ ƒ … … … IRFR3706CPbF IRFU3706CPbF HEXFET Power MOSFET R max DS(on) 9.0mΩ 75A D-Pak I-Pak IRFR3706CPbF IRFU3706CPbF Max. Units 20 ± 12 „ 75 „ 53 280 88 44 0.59 mW/°C - 175 Typ. Max. Units ––– 1.7 ––– 50 °C/W – ...

Page 2

IRFR/U3706CPbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 100 2.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ...

Page 4

IRFR/U3706CPbF 100000 0V, C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 ...

Page 5

LIMITED BY PACKAGE 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 0.02 SINGLE PULSE ...

Page 6

IRFR/U3706CPbF D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com IRFR/U3706CPbF + • • ƒ • - „ ...

Page 8

IRFR/U3706CPbF 5 8 ,5)5 $   ,5)5   www.irf.com ...

Page 9

IRFR/U3706CPbF ,5)8 $   ,5)8   9 ...

Page 10

IRFR/U3706CPbF TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE ...

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