AS4C256K16E0-30 ALSC [Alliance Semiconductor Corporation], AS4C256K16E0-30 Datasheet - Page 4

no-image

AS4C256K16E0-30

Manufacturer Part Number
AS4C256K16E0-30
Description
5V 256Kx16 CMOS DRAM (EDO)
Manufacturer
ALSC [Alliance Semiconductor Corporation]
Datasheet
AC parameters common to all waveforms
Shaded areas contain advance information.
Read cycle
Shaded areas contain advance information.
Std
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Std
Symbol
t
t
t
t
t
t
tRRH
t
t
t
RC
RP
RAS
CAS
RCD
RAD
RSH(R)
CSH
CRP
ASR
RAH
T
REF
CLZ
RAC
CAC
AA
AR(R)
RCS
RCH
RAL
CPN
OFF
4/11/01; v.1.1
Parameter
Random read or write cycle time
RAS
RAS
CAS
RAS
RAS
CAS
RAS
CAS
Row address setup time
Row address hold time
Transition time (rise and fall)
Refresh period
CAS
Parameter
Access time from
Access time from
Access time from address
Column add hold from
Read command setup time
Read command hold time to
Read command hold time to
Column address to
CAS
Output buffer turn-off time
precharge time
pulse width
pulse width
to
to column address delay time
to
to
to
to output in low Z
precharge time
CAS
RAS
CAS
RAS
delay time
hold time (read cycle)
hold time
precharge time
RAS
CAS
RAS
Lead time
RAS
CAS
RAS
Alliance Semiconductor
Min
Min
1.5
26
16
65
25
30
15
10
10
30
0
0
0
3
0
5
5
0
5
0
-30
-30
Max
Max
75K
30
10
16
20
14
50
8
8
®
Min
Min
1.5
28
18
70
25
35
16
11
10
35
0
0
0
4
0
6
5
0
6
0
-35
-35
Max
Max
75K
35
10
18
24
17
50
8
8
Min
Min
85
25
50
10
15
15
10
50
30
25
0
0
0
5
0
5
0
9
3
3
-50
-50
Max
Max
75K
35
25
50
50
10
25
8
8
AS4C256K16E0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
Notes
6
7
4,5
3
8
Notes
6
6,13
7,13
9
9
8,10
4 of 24

Related parts for AS4C256K16E0-30