KM29U128IT SAMSUNG [Samsung semiconductor], KM29U128IT Datasheet - Page 11

• Manufacturer Part Number: KM29U128IT
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

KM29U128T, KM29U128IT
Erase Flow Chart
NAND Flash Technical Notes (Continued)
*
Block Replacement
Erase Error
Buffer
memory
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
error occurs
No
Write Block Address
Erase Completed
or R/B = 1 ?
SR. 0 = 0 ?
SR. 6 = 1 ?
Write D0H
Write 70H
Write 60H
Start
Yes
Yes
No
11
Block B
Block A
Reclaim the Error
*
Read Flow Chart
: copy the corrected whole block data to another
Block Replacement
block (recommended for high reliability system)
When the error happens in Block "A", try to write the
data into another Block "B" by reloading from an exter-
nal buffer. Then, prevent further system access to
Block "A"(by creating a "invalid block" table or other
appropriate scheme.)
*
No
Page Read Completed
FLASH MEMORY
ECC Generation
Write Address
Verify ECC
Read Data
Write 00H
Start
Yes