HAT2043R-EL-E RENESAS [Renesas Technology Corp], HAT2043R-EL-E Datasheet - Page 5
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HAT2043R-EL-E
Manufacturer Part Number
HAT2043R-EL-E
Description
Silicon N Channel Power MOS FET High Speed Power Switching
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
1.HAT2043R-EL-E.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HAT2043R-EL-E
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
HAT2043R
Rev.6.00 Sep 07, 2005 page 5 of 7
0.0001
0.0001
0.001
0.001
0.01
0.01
0.1
0.1
10
10
1
1
10 µ
10 µ
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
D = 1
D = 1
0.5
0.5
100 µ
100 µ
1 m
1 m
20
16
12
8
4
0
0
Source to Drain Voltage
10 m
10 m
Reverse Drain Current vs.
0.4
Source to Drain Voltage
Pulse Width PW (S)
Pulse Width PW (S)
5 V
100 m
100 m
0.8
V
1.2
GS
1
1
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
P
P
=
DM
DM
0
V
Pulse Test
V
1.6
SD
10
10
(V)
PW
PW
2.0
T
T
100
100
D =
D =
1000
1000
PW
PW
T
T
10000
10000