HAT2092RJ-EL-E RENESAS [Renesas Technology Corp], HAT2092RJ-EL-E Datasheet
HAT2092RJ-EL-E
Related parts for HAT2092RJ-EL-E
HAT2092RJ-EL-E Summary of contents
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HAT2092R Silicon N Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable of 4.5 V gate drive Low drive current High density mounting Outline SOP Absolute Maximum Ratings Item Drain to ...
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HAT2092R Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input ...
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HAT2092R Main Characteristics Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics ...
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HAT2092R Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 4 - Case Temperature Body–Drain Diode Reverse Recovery Time 100 50 20 ...
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HAT2092R Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation 0.1 0.01 0.001 0.0001 100 µ 10 µ Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation 0.5 ...
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HAT2092R Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V Rev.3.00 Jan. 13, 2005 page Switching Time Waveform Vout Monitor R L 10% Vin V DS Vout 10 td(on) 90% 10% 90% ...
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... Base material dimension Ordering Information Part Name HAT2092R-EL-E 2500 pcs HAT2092RJ-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Jan. 13, 2005 page 4.90 5 ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...