HAT2105T-EL-E RENESAS [Renesas Technology Corp], HAT2105T-EL-E Datasheet - Page 2

• Manufacturer Part Number: HAT2105T-EL-E
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2105T
Electrical Characteristics
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Notes: 4. Pulse test
REJ03G0384-0200 Rev.2.00 Aug 06, 2007
Page 2 of 3
Item
Symbol
V
V
V
R
R
R
Coss
(BR)DSS
(BR)GSS
Crss
Ciss
t
t
I
I
|y
V
GS(off)
DS(on)
DS(on)
DS(on)
d(on)
d(off)
GSS
DSS
t
t
DF
fs
r
f
|
Min.
0.56
200
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
15
Typ.
0.86
120
1.6
1.9
2.4
0.9
29
10
10
14
24
—
—
—
—
—
9
Max.
2.1
2.2
2.7
5.5
1.4
—
—
—
—
—
—
—
—
—
—
10
5
Unit
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
V
A
A
I
I
V
V
V
I
I
I
I
V
V
f = 1 MHz
V
V
I
D
G
D
D
D
D
F
GS
DS
DS
DS
GS
GS
DD
= 0.5 A, V
= 10 mA, V
= 100 A, V
= 0.5 A, V
= 0.5 A, V
= 2 A, V
= 0.5 A, V
= 12 V, V
= 200 V, V
= 10 V, I
= 10 V
= 0
= 5 V, I
Test Conditions
30 V
GS
D
GS
GS
GS
DS
= 5 V
= 0.5 A
GS
D
DS
GS
= 10 V
= 0
= 10 V
= 4 V
= 1 mA
DS
(Ta = 25°C)
= 0
= 0
= 0
= 0
Note4
Note4
Note4
Note4
Note4