HAT2129H-EL-E RENESAS [Renesas Technology Corp], HAT2129H-EL-E Datasheet

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HAT2129H-EL-E

Manufacturer Part Number
HAT2129H-EL-E
Description
Silicon N Channel Power MOS FET Power Switching
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
HAT2129H
Silicon N Channel Power MOS FET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Rev.5.00 Sep 20, 2005 page 1 of 7
Capable of 7 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
2. Tc = 25 C
3. Value at Tch = 25 C, Rg
= 6 m typ. (at V
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
10 s, duty cycle
Item
GS
= 10 V)
5
1%
1 2
50
3 4
I
D(pulse)
E
Symbol
Pch
I
AP
AR
V
V
Tstg
Tch
I
GSS
I
DSS
DR
Note 3
D
Note 3
Note2
Note1
G
4
D
5
S S S
1 2 3
–55 to +150
Ratings
±20
120
150
40
30
30
20
32
20
1, 2, 3 Source
4
5
REJ03G0049-0500
Gate
Drain
Sep 20, 2005
Unit
mJ
W
V
V
A
A
A
A
C
C
(Ta = 25°C)
Rev.5.00

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HAT2129H-EL-E Summary of contents

Page 1

... HAT2129H Silicon N Channel Power MOS FET Power Switching Features Capable gate drive Low drive current High density mounting Low on-resistance typ. ( DS(on) GS Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage ...

Page 2

... HAT2129H Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge ...

Page 3

... HAT2129H Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics 50 4 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 200 150 100 Gate to Source Voltage Rev.5.00 Sep 20, 2005 page ...

Page 4

... HAT2129H Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test - Case Temperature Body-Drain Diode Reverse Recovery Time 100 50 20 di/dt = 100 A/µ 0.1 0 Reverse Drain Current Dynamic Input Characteristics 100 V DD ...

Page 5

... HAT2129H Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 1.2 Source to Drain Voltage 0.5 0.3 0.1 0.03 0.01 10 µ Avalanche Test Circuit V DS Monitor Rg Vin 50 Ω Rev.5.00 Sep 20, 2005 page 0.5 V Pulse Test 1.6 2.0 V (V) SD Normalized Transient Thermal Impedance vs. Pulse Width 100 µ ...

Page 6

... HAT2129H Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V Rev.5.00 Sep 20, 2005 page Vout Monitor R Vin L Vout d(on) Switching Time Waveform 90% 10% 10% 10% 90% 90 d(off ...

Page 7

... JEITA Package Code RENESAS Code SC-100 PTZZ0005DA-A 1 Ordering Information Part Name HAT2129H-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 20, 2005 page Package Name MASS[Typ.] LFPAK 0 ...

Page 8

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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