INA-03100 Agilent(Hewlett-Packard), INA-03100 Datasheet - Page 3

• Manufacturer Part Number: INA-03100
• Description: Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier
• Manufacturer: Agilent(Hewlett-Packard)

INA-03100 Typical Performance, T
(unless otherwise noted: The values are the achievable performance for the INA-03100 mounted in a 70 mil
stripline package.)
INA-03100 Chip Dimensions
Chip thickness is 140 m/5.5 mil. Bond Pads are
41 m/1.6 mil typical on each side. Note: Ground
Bonding is Critical. Refer to Application Bulletin,
“AB-0007: INA Bonding Configuration”.
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 1.5 GHz, I
Figure 1. Typical Gain and Noise Figure
vs. Frequency, T
3.5
2.0
2.5
1.0
1.5
27
26
25
24
8 7
3
30
25
20
15
10
–55
A 0
GND
0.1
2
1 9
Gain Flat to DC
N
–25
K
(2)
A
P
M
0.2
C
1 dB
TEMPERATURE ( C)
14.8
375
FREQUENCY (GHz)
NF
G
+25
p
(1)
RF
IN
A
13 m
0.5
0.5 mil
= 25 C, I
1.0
(4)
+85
d
2.0
OUT
GND
= 12 mA.
RF
1
(3)
d
+125
= 12 mA.
5.0
–2
19.7
4
2
0
500
5.0
4.0
3.0
2.0
1.0
13 m
0.5 mil
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 2. Device Current vs. Voltage.
25
20
15
10
–4
–8
5
0
8
4
0
0.1
0
A
T
T
T
I
I
I
d
d
d
MS
MS
MS
= 25 C
= 8 mA
= 20 mA
= 12 mA
= +125 C
= +25 C
= –55 C
0.2
2
FREQUENCY (GHz)
6-104
4
0.5
V
d
(V)
1.0
6
2.0
8
5.0
10
Figure 6. Noise Figure vs. Frequency.
Figure 3. Power Gain vs. Current.
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
0.1
5
I
d
I
d
f = 0.1 – 2 GHz
= 12 to 20 mA
= 8 mA
0.2
10
FREQUENCY (GHz)
0.5
I
d
(mA)
15
1.0
f = 3 GHz
f = 4 GHz
20
2.0
5.0
25