HAT2210R-EL-E RENESAS [Renesas Technology Corp], HAT2210R-EL-E Datasheet - Page 8
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HAT2210R-EL-E
Manufacturer Part Number
HAT2210R-EL-E
Description
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
1.HAT2210R-EL-E.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HAT2210R-EL-E
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
HAT2210R, HAT2210RJ
Rev.3.00, Mar.15.2005, page 8 of 11
100
-25
50
20
10
50
40
30
20
10
50
40
30
20
10
5
2
1
0
0.1
Static Drain to Source on State Resistance
0
V
Pulse Test
I
V
D
DS
10 V
Reverse Drain Current
GS
= 8 A
Dynamic Input Characteristics
0
0.3
Case Temperature
Body-Drain Diode Reverse
= 4.5 V
4
Gate Charge
25
Recovery Time
vs. Temperature
1
V
V
8
50
DD
DD
di / dt = 100 A / s
V
GS
3
= 25 V
1 A, 2 A, 5 A
= 25 V
10 V
75 100 125 150
I
= 0, Ta = 25 C
10 V
5 V
D
12
5 V
Qg (nC)
= 1 A, 2 A
10
Tc
I
DR
16
30
( C)
(A)
V
5 A
GS
100
20
10
8
6
4
2
0
10000
100
5000
2000
1000
0.5
0.2
0.1
50
20
10
100
500
200
100
5
1
50
10
2
20
0.1 0.2
50
20
10
5
2
1
0.1 0.2
0
V
f = 1 MHz
V
Rg =4.7 , duty
Forward Transfer Admittance vs.
GS
Drain to Source Voltage V
GS
Tc = –25 C
75 C
5
= 0
= 10 V, V
0.5
Switching Characteristics
Drain Current
Typical Capacitance vs.
Drain to Source Voltage
0.5
Drain Current
Drain Current
1
10
25 C
1
t d(off)
2
DD
2
15
= 10 V
1 %
5
5
10 20
I
D
I
V
Pulse Test
20
10 20
D
DS
(A)
(A)
= 10 V
DS
t d(on)
t r
t f
25
50 100
Coss
Crss
Ciss
50 100
(V)
30