AO8810L AOSMD [Alpha & Omega Semiconductors], AO8810L Datasheet - Page 4
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AO8810L
Manufacturer Part Number
AO8810L
Description
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
AOSMD [Alpha & Omega Semiconductors]
Datasheet
1.AO8810L.pdf
(4 pages)
AO8810
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
10.0
1.0
0.1
5
4
3
2
1
0
0.1
0.01
0
0.1
10
0.00001
1
V
I
T
T
R
limited
D
Figure 9: Maximum Forward Biased Safe
J(Max)
A
DS
=7A
DS(ON)
=25°C
=10V
Figure 7: Gate-Charge Characteristics
D=T
T
R
=150°C
J,PK
θJA
=83°C/W
on
=T
Operating Area (Note E)
5
/T
A
1s
+P
10s
0.0001
1
DM
.Z
V
θJA
Qg (nC)
DS
0.1s
.R
10
(Volts)
θJA
DC
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
100µs
10ms
1ms
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
15
10µs
0.01
100
20
Pulse Width (s)
0.1
2000
1600
1200
800
400
40
30
20
10
0
0
0.001
0
Figure 10: Single Pulse Power Rating Junction-to-
Figure 8: Capacitance Characteristics
1
0.01
C
rss
P
5
D
C
C
iss
0.1
oss
T
Ambient (Note E)
on
Pulse Width (s)
10
V
DS
T
(Volts)
10
1
100
10
T
T
J(Max)
A
15
=25°C
=150°C
100
1000
1000
20