AO8822L AOSMD [Alpha & Omega Semiconductors], AO8822L Datasheet
AO8822L
Manufacturer Part Number
AO8822L
Description
Common-Drain Dual N-Channel Enhancement Mode Field
Manufacturer
AOSMD [Alpha & Omega Semiconductors]
Datasheet
1.AO8822L.pdf
(4 pages)
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO8822
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO8822 uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 1.8V while
retaining a 12V V
for use as a uni-directional or bi-directional load
switch, facilitated by its common-drain configuration.
Standard Product AO8822 is Pb-free (meets ROHS
& Sony 259 specifications). AO8822L is a Green
Product ordering option. AO8822 and AO8822L are
electrically identical.
A
D1/D2
S1
S1
G1
GS(MAX)
A
DS(ON)
1
2
3
4
B
Top View
TSSOP-8
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
rating. This device is suitable
, low gate charge and
C
8
7
6
5
A
A
A
=25°C unless otherwise noted
D1/D2
S2
S2
G2
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
G1
Symbol
Features
V
I
R
R
R
R
R
D
R
DS
DS(ON)
DS(ON)
DS(ON)
DS(ON)
θJA
θJL
= 7 A (V
(V) = 20V
S1
D1
< 21mΩ (V
< 24mΩ (V
< 32mΩ (V
< 50mΩ (V
Maximum
-55 to 150
GS
0.96
±12
Typ
101
5.7
1.5
20
30
63
64
= 10V)
7
G2
GS
GS
GS
GS
= 10V)
= 4.5V)
= 2.5V)
= 1.8V)
Max
130
83
83
S2
D2
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A
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AO8822L Summary of contents
Page 1
... This device is suitable GS(MAX) for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AO8822 is Pb-free (meets ROHS & Sony 259 specifications). AO8822L is a Green Product ordering option. AO8822 and AO8822L are electrically identical. TSSOP-8 Top View ...
Page 2
AO8822 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS BV Gate-Source Breakdown Voltage GSO V Gate Threshold Voltage GS(th) ...
Page 3
AO8822 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V (Volts) DS Figure 1: On-Regions Characteristi =1. Figure 3: ...
Page 4
AO8822 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =10V (nC) Figure 7: Gate-Charge Characteristics 100 T =150°C, T =25°C J(Max DS(ON) limited ...