K6R1004C1D-JC10 SAMSUNG [Samsung semiconductor], K6R1004C1D-JC10 Datasheet - Page 6

• Manufacturer Part Number: K6R1004C1D-JC10
• Description: 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
• Manufacturer: SAMSUNG [Samsung semiconductor]

K6R1004V1D
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
TIMING DIAGRAMS
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End of Write to Output Low-Z
TIMING WAVEFORM OF READ CYCLE(1)
Address
CS
OE
Data out
V
Current
TIMING WAVEFORM OF READ CYCLE(2)
CC
Address
Data Out
Parameter
I
I
CC
SB
High-Z
Previous Valid Data
Symbol
t
t
t
t
t
t
t
t
t
WHZ
t
t
WP1
WC
CW
WR
DW
OW
AW
WP
AS
DH
t
PU
t
LZ(4,5)
Min
t
(Address Controlled
8
6
0
6
6
8
0
0
4
0
3
(WE=V
OLZ
50%
K6R1004V1D-08
t
t
OH
AA
t
CO
IH
t
)
OE
- 6 -
t
AA
Max
t
,
RC
4
CS=OE=V
-
-
-
-
-
-
-
-
-
-
t
RC
IL
, WE=V
Valid Data
IH
Min
10
10
7
0
7
7
0
0
5
0
3
)
K6R1004V1D-10
PRELIMINARY
Valid Data
50%
t
CMOS SRAM
PD
Max
t
t
t
HZ(3,4,5)
DH
OHZ
5
-
-
-
-
-
-
-
-
-
-
PRELIMINARY
for AT&T
July 2004
Rev. 3.0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns