K6R1004V1C-C10 SAMSUNG [Samsung semiconductor], K6R1004V1C-C10 Datasheet - Page 5

• Manufacturer Part Number: K6R1004V1C-C10
• Description: 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
• Manufacturer: SAMSUNG [Samsung semiconductor]

WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
K6R1004V1C-C/C-L, K6R1004V1C-I/C-P
TIMMING DIAGRAMS
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
Address
Data Out
Address
CS
OE
Data out
V
Current
CC
Parameter
I
I
SB
CC
Previous Valid Data
Sym-
t
t
bol
t
t
t
t
t
t
t
WHZ
t
WP1
t
WC
CW
AW
WP
WR
DW
OW
AS
DH
K6R1004V1C-10
Min
10
10
7
0
7
7
0
0
5
0
3
t
PU
t
LZ(4,5)
(Address Controlled
(WE=V
Max
5
t
-
-
-
-
-
-
-
-
-
-
OLZ
t
OH
50%
t
AA
IH
)
t
CO
K6R1004V1C-12
- 5 -
t
Min
OE
12
12
CCPCCCRCELIMINARY
8
0
8
8
0
0
6
0
3
t
AA
,
CS=OE=V
t
Max
RC
t
6
RC
-
-
-
-
-
-
-
-
-
-
IL
, WE=V
K6R1004V1C-15
Min
15
15
9
0
9
9
0
0
7
0
3
Valid Data
Preliminary
IH
)
Max
7
-
-
-
-
-
-
-
-
-
-
PRELIMINARY
Valid Data
CMOS SRAM
K6R1004V1C-20
t
t
t
HZ(3,4,5)
OH
OHZ
Min
50%
20
10
10
10
20
t
0
0
0
8
0
3
PD
PRELIMINARY
Max
Revision 2.0
9
-
-
-
-
-
-
-
-
-
-
April 2000
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns