GVT71128D32T-4 ETC1 [List of Unclassifed Manufacturers], GVT71128D32T-4 Datasheet

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GVT71128D32T-4

Manufacturer Part Number
GVT71128D32T-4
Description
128K X 32 SYNCHRONOUS BURST SRAM
Manufacturer
ETC1 [List of Unclassifed Manufacturers]
Datasheet
FEATURES
• Fast access times: 4.8, 5, 6, and 7ns
• Fast clock speed: 100, 83, and 66MHz
• Provide high performance 3-1-1-1 access rate
• Fast OE# access times: 5, 6, and 7ns
• Optimal for depth expansion (one cycle chip deselect to
• Single +3.3V -5% and +10%power supply
• Support +2.5V I/O
• 5V tolerant inputs except I/O’s
• Clamp diodes to VSSQ at all outputs
• Common data inputs and data outputs
• BYTE WRITE ENABLE and GLOBAL WRITE control
• Three chip enables for depth expansion and address
• Address, control, input, and output pipeline registers
• Internally self-timed WRITE CYCLE
• Burst control pins (interleaved or linear burst sequence)
• Automatic power-down for portable applications
• High density, high speed packages
• Low capacitive bus loading
• High 30pF output drive capability at rated access time
OPTIONS
• Timing
• Packages
• Temperature
Galvantech, Inc. 3080 Oakmead Village Drive, Santa Clara, CA 95051
Tel (408) 566-0688
Rev. 11/9 9
BURST SRAM
PIPELINED OUTPUT
SYNCHRONOUS
eliminate bus contention)
pipeline
4.8ns access/10ns cycle
5ns access/10ns cycle
6ns access/12ns cycle
7ns access/15ns cycle
100-pin TQFP
Commercial
Industrial
GALVANTECH
Fax (408) 566-0699 Web Site www.galvantech.com
MARKING
None
I
-4
-5
-6
-7
T
(
(
0°C
-40°C
to
,
70°C)
to
85°C)
128K X 32 SYNCHRONOUS BURST SRAM
GENERAL DESCRIPTION
employs high-speed, low power CMOS designs using
advanced
technology. Each memory cell consists of four transistors and
two high valued resistors.
SRAM cells with advanced synchronous peripheral circuitry
and a 2-bit counter for internal burst operation. All
synchronous inputs are gated by registers controlled by a
positive-edge-triggered clock input (CLK). The synchronous
inputs include all addresses, all data inputs, address-pipelining
chip enable (CE#), depth-expansion chip enables (CE2# and
CE2), burst control inputs (ADSC#, ADSP#, and ADV#),
write enables (BW1#, BW2#, BW3#, BW4#,and BWE#), and
global write (GW#).
and burst mode control (MODE). The data outputs (Q),
enabled by OE#, are also asynchronous.
address status processor (ADSP#) or address status controller
(ADSC#) input pins. Subsequent burst addresses can be
internally generated as controlled by the burst advance pin
(ADV#).
chip to initiate self-timed WRITE cycle. WRITE cycles can
be one to four bytes wide as controlled by the write control
inputs. Individual byte write allows individual byte to be
written. BW1# controls DQ1-DQ8. BW2# controls DQ9-
DQ16. BW3# controls DQ17-DQ24. BW4# controls DQ25-
DQ32. BW1#, BW2# BW3#, and BW4# can be active only
with BWE# being LOW. GW# being LOW causes all bytes to
be written. This device also incorporates pipelined enable
circuit for easy depth expansion without penalizing system
performance.
supply. All inputs and outputs are TTL-compatible. The
device is ideally suited for 486, Pentium
PowerPC
wide synchronous data bus.
The Galvantech Synchronous Burst SRAM family
The GVT71128D32 SRAM integrates 131,072x32
Asynchronous inputs include the output enable (OE#)
Addresses and chip enables are registered with either
Address, data inputs, and write controls are registered on-
The GVT71128D32 operates from a +3.3V power
128K x 32 SRAM
+3.3V SUPPLY, PIPELINED, SINGLE
CYCLE DESELECT, BURST COUNTER
TM
systems and for systems that are benefited from a
triple-layer
polysilicon,
GVT71128D32
PowerPC is a trademark of IBM Corporation.
Galvantech, Inc. reserves the right to change
Pentium is a trademark of Intel Corporation.
double-layer
products or specifications without notice.
TM
, 680x0, and
metal

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GVT71128D32T-4 Summary of contents

Page 1

... Each memory cell consists of four transistors and two high valued resistors. The GVT71128D32 SRAM integrates 131,072x32 SRAM cells with advanced synchronous peripheral circuitry and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered clock input (CLK). The synchronous ...

Page 2

... ADSC# ADV# A1-A0 MODE NOTE: The Functional Block Diagram illustrates simplified device operation. See Truth Table, pin descriptions and timing diagrams for detailed information. November 20, 1999 Rev. 11 128K X 32 SYNCHRONOUS BURST SRAM BYTE 1 WRITE D Q BYTE 2 WRITE D Q BYTE 3 WRITE D Q BYTE 4 WRITE ...

Page 3

... BWE# Input- Synchronous 88 GW# Input- Synchronous 89 CLK Input- Synchronous 98 CE# Input- Synchronous 92 CE2# Input- Synchronous November 20, 1999 Rev. 11 128K X 32 SYNCHRONOUS BURST SRAM PIN ASSIGNMENT (Top View) 100 ...

Page 4

... WRITE all bytes H WRITE all bytes L November 20, 1999 Rev. 11 128K X 32 SYNCHRONOUS BURST SRAM TYPE input- Chip enable: This active HIGH input is used to enable the device. Synchronous Input Output Enable: This active LOW asynchronous input enables the data output drivers. Input- Address Advance: This active LOW input is used to control the internal burst counter ...

Page 5

... ADSP# LOW along with chip being selected always initiates an READ cycle at the L-H edge of CLK. A WRITE cycle can be performed by setting WRITE# LOW for the CLK L-H edge of the subsequent wait cycle. Refer to WRITE timing diagram for clarification. November 20, 1999 Rev. 11 128K X 32 SYNCHRONOUS BURST SRAM CE# CE2# CE2 ADSP # ADSC# ADV# ...

Page 6

... Thermal Resistance - Junction to Case November 20, 1999 Rev. 11 128K X 32 SYNCHRONOUS BURST SRAM *Stresses greater than those listed uunder “Absolute Maximum Ratings” may cause permanent damage to the device.This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of ...

Page 7

... OE to output in Low output in High-Z Setup Times Address, Controls and Data In Hold Times Address, Controls and Data In CAPACITANCE DERATING DESCRIPTION SYMBOL t Clock to output valid November 20, 1999 Rev. 11 128K X 32 SYNCHRONOUS BURST SRAM - MIN MAX MIN MAX MIN ...

Page 8

... A WRITE cycle is defined by at one byte or all byte WRITE per READ/WRITE TRUTH TABLE “don’t care” when a byte write enable is sampled LOW. November 20, 1999 Rev. 11 128K X 32 SYNCHRONOUS BURST SRAM OUTPUT LOADS FOR 3.3V I 3.0V 1.5ns 1.5V 1.5V See Figures 1 and ...

Page 9

... BW1#, BW2#, BW3#, BW4#, BWE#, GW# CE# (See Note) ADV# OE# t KQLZ DQ Note: CE# active in this timing diagram means that all chip enables CE#, CE2, and CE2# are active. November 20, 1999 Rev. 11 128K X 32 SYNCHRONOUS BURST SRAM READ TIMING ...

Page 10

... BWE# GW# CE# (See Note) ADV# OE# t KQX DQ Q SINGLE WRITE Note: CE# active in this timing diagram means that all chip enables CE#, CE2, and CE2# are active. November 20, 1999 Rev. 11 128K X 32 SYNCHRONOUS BURST SRAM WRITE TIMING OEHZ D(A1) D(A2) D(A2+1) D(A2+1) BURST WRITE 10 ...

Page 11

... BW1#, BW2#, BW3#, BW4#, BWE#, GW# CE# (See Note) ADV# OE# DQ Note: CE# active in this timing diagram means that all chip enables CE#, CE2, and CE2# are active. November 20, 1999 Rev. 11 128K X 32 SYNCHRONOUS BURST SRAM READ/WRITE TIMING Q(A1) Q(A2) D(A3) Q(A3) Pass Through Single Single Write ...

Page 12

... GALVANTECH 100 Pin TQFP Package Dimensions # 1 1.40 + 0.05 1.60 Max Note: All dimensions in Millimeters November 20, 1999 Rev. 11 128K X 32 SYNCHRONOUS BURST SRAM 16.00 + 0.10 14.00 + 0.10 0.65 Basic 0.30 + 0.08 12 Galvantech, Inc. reserves the right to change products or specifications without notice. GVT71128D32 0.60 + 0.15 ...

Page 13

... GALVANTECH Ordering Information GVT 71128D32 Galvantech Prefix Part Number November 20, 1999 Rev. 11 128K X 32 SYNCHRONOUS BURST SRAM 13 Galvantech, Inc. reserves the right to change products or specifications without notice. GVT71128D32 Temperature (Blank = Commercial I = Industrial) Speed (4 = 4.8ns access/10ns cycle 5 = 5ns access/10ns cycle 6 = 6ns access/12ns cycle ...

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