K6R1016V1D-JTICI08/10 SAMSUNG [Samsung semiconductor], K6R1016V1D-JTICI08/10 Datasheet
K6R1016V1D-JTICI08/10
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K6R1016V1D-JTICI08/10 Summary of contents
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... SAMSUNG branch office near your office, call or contact Headquarters. Draft Data May. 11. 2001 June. 18. 2001 September. 9. 2001 December. 18. 2001 Previous Current 100mA 90mA 85mA 75mA - 1 - PRELIMINARY PRELIMINARY for AT&T CMOS SRAM Remark Preliminary Preliminary Preliminary Final Revision 1.0 December 2001 ...
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... K6R1008V1D 1Mb Async. Fast SRAM Ordering Information Org. Part Number K6R1004C1D-JC(I) 10/12 256K x4 K6R1004V1D-JC(I) 08/10 K6R1008C1D-J(T)C(I) 10/12 128K x8 K6R1008V1D-J(T)C(I) 08/10 K6R1016C1D-J(T,E)C(I) 10/12 64K x16 K6R1016V1D-J(T,E)C(I) 08/10 VDD(V) Speed ( ns ) PKG 5 10/ 32-SOJ 3.3 8/10 5 10/ 32-SOJ T : 32-TSOP2 3.3 8/10 5 10/ 44-SOJ T : 44-TSOP2 3.3 8/ 48-TBGA - 2 - PRELIMINARY PRELIMINARY for AT&T CMOS SRAM Temp. & Power ...
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... PIN FUNCTION Pin Name I PRELIMINARY PRELIMINARY for AT&T CMOS SRAM (Top View I I Vss SOJ/ 24 Vcc TSOP2 ...
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... IH IL, OUT Ind. IH -0.2V -0. 0. =8mA OL =-4mA OH Test Conditions C V =0V I PRELIMINARY PRELIMINARY for AT&T CMOS SRAM Rating Unit -0.5 to 4.6 V -0 -65 to 150 - Max Unit 3 0.3*** V CC 0.8 V Min Max Unit - ...
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... Including Scope and Jig Capacitance K6R1008V1D-08 Min Max PRELIMINARY PRELIMINARY for AT&T CMOS SRAM Value 3ns 1.5V See below , & t WHZ OW OLZ OHZ +3.3V 319 D OUT 353 5pF* K6R1008V1D-10 Unit Min Max ...
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... Controlled CS=OE (WE BLZ(4, OLZ t LZ(4,5) Valid Data PRELIMINARY PRELIMINARY for AT&T CMOS SRAM K6R1008V1D-10 Unit Max - Valid Data t HZ(3,4,5) t BHZ(3,4,5) t OHZ t PD 50% Revision 1.0 December 2001 ...
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... HZ LZ IL. (OE= Clock CW( WP(2) AS( Valid Data t OHZ(6) High-Z(8) (OE=Low Fixed CW( AS(4) WP1( Valid Data t WHZ(6) High-Z( PRELIMINARY PRELIMINARY for AT&T CMOS SRAM WR( WR( (10) (9) Revision 1.0 December 2001 ...
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... WP applied in case a write ends going high. WR Mode I/O Pin Not Select High-Z Output Disable High-Z Read D OUT Write PRELIMINARY PRELIMINARY for AT&T CMOS SRAM t WR( High-Z High-Z(8) Supply Current SB1 Revision 1.0 December 2001 ...
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... MAX 0.10 0.004 1.00 0.10 0.039 0.047 0.004 1.27 0.05 MIN 0.050 0.002 - 9 - PRELIMINARY PRELIMINARY for AT&T CMOS SRAM Units:millimeters/Inches 9.40 0.25 0.370 0.010 +0.10 0.20 -0.05 +0.004 0.008 -0.002 0.69 MIN 0.027 ) 0.10 3.76 MAX MAX 0.004 0.148 ) 0~8 0. 0.010 0.45 ~0.75 0.018 ~ 0.030 0. 0.020 +0.10 0.15 -0.05 +0.004 0.006 -0 ...
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