K9F5608Q0C-D SAMSUNG [Samsung semiconductor], K9F5608Q0C-D Datasheet - Page 38

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K9F5608Q0C-D

Manufacturer Part Number
K9F5608Q0C-D
Description
32M x 8 Bit 16M x 16 Bit NAND Flash Memory
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
LOCKPRE
Power-On Auto-Read
The device is designed to offer automatic reading of the first page without command and address input sequence during power-on.
An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. LOCKPRE pin controls activation of
auto- page read function. Auto-page read function is enabled only when LOCKPRE pin is logic high state
after power-on without latency. Power-On Auto Read mode is available only on 3.3V device(K9F56XXU0C).
Figure 16. Power-On Auto-Read
K9F5608Q0C
K9F5608D0C
K9F5608U0C
V
CLE
CE
WE
ALE
R/B
RE
I/O
CC
X
K9F5616Q0C
K9F5616D0C
K9F5616U0C
~ 1.8V
(3.3V device only)
t
R
38
1st
FLASH MEMORY
2nd
.
Serial access may be done
3rd
....
n th

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