AO4411L AOSMD [Alpha & Omega Semiconductors], AO4411L Datasheet
AO4411L
Manufacturer Part Number
AO4411L
Description
P-Channel Enhancement Mode Field Effect Transistor
Manufacturer
AOSMD [Alpha & Omega Semiconductors]
Datasheet
1.AO4411L.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AO4411L
Manufacturer:
AOS
Quantity:
2 700
Part Number:
AO4411L
Manufacturer:
AOS/ 万代
Quantity:
20 000
Part Number:
AO4411L/AO4411
Manufacturer:
AOS/万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4411 uses advanced trench technology to
provide excellent R
charge. This device is suitable for use as a load
switch or in PWM applications. Standard Product
AO4411 is Pb-free (meets ROHS & Sony 259
specifications). AO4411L is a Green Product
ordering option. AO4411 and AO4411L are
electrically identical.
AO4411
P-Channel Enhancement Mode Field Effect Transistor
A
A
DS(ON)
S
S
S
G
B
T
T
T
T
Top View
A
A
A
A
SOIC-8
=25°C
=70°C
=25°C
=70°C
, and ultra-low low gate
C
A
A
A
=25°C unless otherwise noted
D
D
D
D
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
Symbol
Features
V
I
R
R
G
R
D
R
DS
DS(ON)
DS(ON)
θJA
θJL
= -8 A (V
(V) = -30V
< 32mΩ (V
< 55mΩ (V
D
S
Maximum
-55 to 150
GS
±20
-6.6
Typ
-30
-40
2.1
24
54
21
-8
3
= -10V)
GS
GS
= -10V)
= -4.5V)
Max
40
75
30
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A
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AO4411L Summary of contents
Page 1
... DS(ON) charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4411 is Pb-free (meets ROHS & Sony 259 specifications). AO4411L is a Green Product ordering option. AO4411 and AO4411L are electrically identical. SOIC-8 Top View S S ...
Page 2
AO4411 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current ...
Page 3
AO4411 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -4.5V -10V - (Volts) DS Fig 1: On-Region Characteristics =-4. ...
Page 4
AO4411 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C, T =25°C J(Max DS(ON) 10.0 limited 0.1s ...