K6R4008V1C-C10 SAMSUNG [Samsung semiconductor], K6R4008V1C-C10 Datasheet
K6R4008V1C-C10
Related parts for K6R4008V1C-C10
K6R4008V1C-C10 Summary of contents
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... K6R4008V1C-C/C-L, K6R4008V1C-I/C-P 3Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Rev. 1.0 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics. 1.3 Changed I to 20mA SB1 Rev. 2.0 Relax D.C parameters. ...
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... The device is fabricated using SAMSUNG s advanced CMOS process and designed for high-speed circuit technology particularly well suited for use in high-density high-speed system applications. The K6R4008V1C is packaged in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II. ORDERING INFORMATION K6R4008V1C-C10/C12/C15 K6R4008V1C-I10/I12/I15 ...
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... K6R4008V1C-C/C-L, K6R4008V1C-I/C-P PIN CONFIGURATION (Top View I I 36-SOJ Vcc 9 Vss PIN FUNCTION Pin Name Pin Function Address Inputs Write Enable ...
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... K6R4008V1C-C/C-L, K6R4008V1C-I/C-P RECOMMENDED DC OPERATING CONDITIONS* Parameter Supply Voltage Ground Input High Voltage Input Low Voltage * The above parameters are also guaranteed at industrial temperature range (Min) = -2.0V a.c(Pulse Width 8ns) for I IL *** V (Max 2.0V a.c (Pulse Width 8ns) for AND OPERATING CHARACTERISTICS* Parameter ...
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... K6R4008V1C-C/C-L, K6R4008V1C-I/C-P AC CHARACTERISTICS ( TEST CONDITIONS* Parameter Input Pulse Levels Input Rise and Fall Times Input and Output timing Reference Levels Output Loads *The above test conditions are also applied at industrial temperature range. Output Loads( OUT ...
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... K6R4008V1C-C/C-L, K6R4008V1C-I/C-P WRITE CYCLE* Parameter Symbol Write Cycle Time t WC Chip Select to End of Write t CW Address Set-up Time t AS Address Valid to End of Write t AW Write Pulse Width(OE High Write Pulse Width(OE Low) t WP1 Write Recovery Time t WR Write to Output High-Z ...
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... K6R4008V1C-C/C-L, K6R4008V1C-I/C-P TIMING WAVEFORM OF WRITE CYCLE(1) Address High-Z Data in Data out TIMING WAVEFORM OF WRITE CYCLE(2) Address CS WE High-Z Data in Data out TIMING WAVEFORM OF WRITE CYCLE(3) Address CS WE High-Z Data in High-Z Data out (OE= Clock CW( WP(2) AS( Valid Data t OHZ(6) ...
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... K6R4008V1C-C/C-L, K6R4008V1C-I/C-P NOTES(WRITE CYCLE) 1. All write cycle timing is referenced from the last valid address to the first transition address write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low ; A write ends at the earliest transition CS going high or WE going high ...
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... K6R4008V1C-C/C-L, K6R4008V1C-I/C-P PACKAGE DIMENSIONS 36-SOJ-400 #36 11.18 0.12 0.440 0.005 #1 +0.10 0.43 -0.05 +0.004 0.017 0.95 -0.002 ( ) 0.0375 44-TSOP2-400BF #44 #1 18.81 MAX 0.741 18.41 0.10 0.725 0.004 0.10 0.30 0.805 0. 0.004 0.032 0.012 0.002 #19 #18 23.90 MAX 0.941 23.50 0.12 0.925 0.005 ( ( +0.10 0.71 -0.05 1.27 +0.004 0.028 0.050 -0.002 #23 11.76 0.20 0.463 0.008 #22 1.00 1.20 0.10 MAX 0.039 0.047 0.004 0.10 0.05 0.004 MIN 0.80 0.002 0.0315 ...