AO4447L AOSMD [Alpha & Omega Semiconductors], AO4447L Datasheet

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AO4447L

Manufacturer Part Number
AO4447L
Description
P-Channel Enhancement Mode Field Effect Transistor
Manufacturer
AOSMD [Alpha & Omega Semiconductors]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4447L
Manufacturer:
AOS/ 万代
Quantity:
20 000
Part Number:
AO4447L/AO4447
Manufacturer:
AO
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4447 uses advanced trench technology to
provide excellent R
charge. This device is suitable for use as a load
switch. The device is ESD protected. Standard
Product AO4447 is Pb-free (meets ROHS & Sony
259 specifications). AO4447L is a Green Product
ordering option. AO4447 and AO4447L are
electrically identical.
AO4447
P-Channel Enhancement Mode Field Effect Transistor
A
A
DS(ON)
S
S
S
G
B
T
T
T
T
Top View
A
A
A
A
SOIC-8
=25°C
=70°C
=25°C
=70°C
, and ultra-low low gate
C
A
A
A
=25°C unless otherwise noted
D
D
D
D
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
Symbol
G
Features
V
I
Max R
Max R
ESD Rating: 4KV HBM
R
D
R
DS
θJA
θJL
= -15 A (V
(V) = -30V
DS(ON)
DS(ON)
Maximum
-55 to 150
D
S
-13.6
±20
Typ
< 7.5mΩ (V
-30
-15
-60
< 12mΩ (V
3.1
GS
26
50
14
2
= -10V)
Max
GS
GS
40
75
24
= -4V)
= -10V)
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO4447L Summary of contents

Page 1

... DS(ON) charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4447 is Pb-free (meets ROHS & Sony 259 specifications). AO4447L is a Green Product ordering option. AO4447 and AO4447L are electrically identical. SOIC-8 Top View ...

Page 2

AO4447 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current ...

Page 3

AO4447 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 -10V -3. (Volts) DS Fig 1: On-Region Characteristics (A) D Figure ...

Page 4

AO4447 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V DS I =-15A (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 1s 1.0 10s T =150°C J(Max) T ...

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Page 7

ALPHA & OMEGA SEMICONDUCTOR, LTD. SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation SO-8 Tape and Reel Data ...

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