HMC566LP4E_10 HITTITE [Hittite Microwave Corporation], HMC566LP4E_10 Datasheet - Page 3

• Manufacturer Part Number: HMC566LP4E_10
• Description: GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 28 - 36 GHz
• Manufacturer: HITTITE [Hittite Microwave Corporation]

7 - 3
7
P1dB vs. Temperature
Output IP3 vs. Temperature
Gain, Noise Figure & Power vs.
Supply Voltage @ 32 GHz
30
27
24
21
18
15
12
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
18
16
14
12
10
30
28
26
24
22
20
18
16
14
9
6
3
0
8
6
4
2.5
26
26
28
28
Phone: [phone]
Gain
P1dB
30
30
FREQUENCY (GHz)
FREQUENCY (GHz)
Vdd (V)
3
Application Support: Phone: [phone] or [e-mail]
32
32
+25 C
+85 C
- 40 C
+25 C
+85 C
- 40 C
34
34
Noise Figure
v02.0609
36
36
Fax: [phone]
3.5
10
9
8
7
6
5
4
3
2
1
0
38
38
Psat vs. Temperature
Power Compression @ 32 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, 2, 3, 4)
rf input power (rfiN)(Vdd = +3 Vdc)
Channel Temperature
Continuous pdiss (T= 85 °C)
(derate 9.6 mw/°C above 85 °C)
Thermal resistance
(channel to ground paddle)
storage Temperature
operating Temperature
GaAs pHEMT MMIC LOW NOISE
Order On-line at www.hittite.com
18
16
14
12
10
25
20
15
10
8
6
4
5
0
-20
26
-18
eleCTrosTATiC seNsiTiVe DeViCe
oBserVe HANDliNG preCAUTioNs
28
-16
AMPLIFIER, 28 - 36 GHz
Pout
Gain
PAE
-14
30
INPUT POWER (dBm)
FREQUENCY (GHz)
-12
HMC566LP4E
32
-10
+25 C
+85 C
- 40 C
34
-8
+3.5 V
+5 dBm
175 °C
0.8 w
104 °C/w
-65 to +150 °C
-40 to +85 °C
-6
36
-4
38
-2