HMC580ST89E HITTITE [Hittite Microwave Corporation], HMC580ST89E Datasheet - Page 5

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HMC580ST89E

Manufacturer Part Number
HMC580ST89E
Description
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet

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5 - 576
5
Pin Descriptions
Application Circuit
Recommended Bias Resistor Values
for Icc = 88 mA, Rbias = (Vs - Vcc) / Icc, Vs > +5V
Recommended Component Values for Key Application Frequencies with Vs = +5V
Supply Voltage (Vs)
R
R
Pin Number
BIAS
BIAS
2, 4
V
P
1
3
ALUE
OWER
Component
C1, C2
Rbias
R
L1
ATING
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Function
OUT
GND
IN
0.01 μF
0 Ohms
270 nH
50
13 Ω
¼ W
These pins and package bottom must be connected to
6V
RF output and DC Bias (Vcc) for the output stage.
v00.1106
An off chip DC blocking capacitor is required.
Order On-line at www.hittite.com
36 Ω
½ W
This pin is DC coupled.
8V
1.5 Ohms
110 nH
820 pF
250
RF/DC ground.
Description
Frequency (MHz)
Note:
1. External blocking capacitors are required on
2. R
HMC580ST89
1.5 Ohms
RFIN and RFOUT.
MMIC AMPLIFIER, DC - 1.0 GHz
110 nH
820 pF
BIAS
400
provides DC bias stability over temperature.
InGaP HBT GAIN BLOCK
1.8 Ohms
100 pF
56 nH
900
Interface Schematic
/
580ST89E

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