DMN2005DLP4K_09 DIODES [Diodes Incorporated], DMN2005DLP4K_09 Datasheet
DMN2005DLP4K_09
Manufacturer Part Number
DMN2005DLP4K_09
Description
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Manufacturer
DIODES [Diodes Incorporated]
Datasheet
1.DMN2005DLP4K_09.pdf
(5 pages)
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Features
•
•
•
•
•
•
•
•
•
Drain-Source Voltage
Gate-Source Voltage
Drain Current per element (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (per element) (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (per element) (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Notes:
DMN2005DLP4K
Document number: DS30801 Rev. 8 - 2
Low On-Resistance
Very Low Gate Threshold Voltage, 0.9V Max.
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
ESD Protected Gate
Ultra Low Profile Package
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
@T
ESD protected
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
Continuous
Pulsed (Note 3)
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Symbol
R
BV
V
⏐Y
DS (ON)
I
I
GS(th)
www.diodes.com
GSS
DSS
DSS
fs
DFN1310H4-6
⏐
1 of 5
0.53
Min
20
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Mechanical Data
•
•
•
•
•
•
•
T
Symbol
Symbol
J
V
V
R
, T
P
GSS
DSS
I
Please click here to visit our online spice models database.
θ JA
D
D
STG
Case: DFN1310H4-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish ⎯ NiPdAu annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
0.85
Typ
0.9
1.2
2.4
2.5
⎯
⎯
⎯
⎯
⎯
Internal Schematic
S
1
D
TOP VIEW
1
G
1
Max
0.9
1.5
1.7
1.7
3.5
3.5
⎯
⎯
10
±5
G
2
D
2
S
-65 to +150
2
Unit
mS
μA
μA
Ω
Value
Value
V
V
±10
200
250
350
357
20
V
V
V
V
V
V
V
V
V
V
GS
DS
GS
DS
GS
GS
GS
GS
GS
DS
= 17V, V
= ±8V, V
= V
= 4V, I
= 2.7V, I
= 2.5V, I
= 1.8V, I
= 1.5V, I
= 3V, I
= 0V, I
GS
DMN2005DLP4K
Test Condition
, I
D
D
D
D
= 10mA
= 10mA
= 100μA
D
D
D
D
GS
DS
= 100μA
= 200mA
= 10mA
= 200mA
= 1mA
= 0V
= 0V
© Diodes Incorporated
°C/W
Unit
Unit
mW
mA
°C
V
V
October 2009
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DMN2005DLP4K_09 Summary of contents
Page 1
Features • Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 4) • ESD ...
Page 2
=1.8V 1 1. 1.4V GS 0.6 0.4 0 DRAIN-SOURCE VOLTAGE (V) ...
Page 3
... I , DRAIN CURRENT (A) D Fig. 9 Forward Transfer Admittance vs. Drain Current Ordering Information (Note 6) Part Number DMN2005DLP4K-7 Notes: 6. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information DMN2005DLP4K Document number: DS30801 Rev vs. Ambient Temperature Fig. 8 Reverse Drain Current Case DFN1310H4 Product Type Marking Code ...
Page 4
Package Outline Dimensions Suggested Pad Layout b G3 DMN2005DLP4K Document number: DS30801 Rev DFN1310H4-6 Dim ...
Page 5
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY ...