QM100 MITSUBISHI [Mitsubishi Electric Semiconductor], QM100 Datasheet - Page 3

• Manufacturer Part Number: QM100
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

PERFORMANCE CURVES
10
200
160
120
10
10
80
40
–1
0
7
5
4
3
2
7
5
4
3
2
COLLECTOR-EMITTER VOLTAGE V
5
4
3
2
1
0
1
0
10
1.0
0
COLLECTOR-EMITTER SATURATION
–2
BASE-EMITTER VOLTAGE V
T
2
CHARACTERISTICS (TYPICAL)
j
COMMON EMITTER OUTPUT
=25°C
CHARACTERISTIC (TYPICAL)
COMMON EMITTER INPUT
3
1.4
T
T
1
4
BASE CURRENT I
j
j
=25°C
=125°C
5
VOLTAGE (TYPICAL)
7
10
1.8
–1
2
2
3
4
5
2.2
3
7
I
10
C
=100A
B
T
V
0
j
CE
=25°C
I
(A)
C
2
2.6
I
=50A
I
I
I
I
=2.0V
B
4
B
B
B
B
BE
3
=2.0A
=1.0A
=0.6A
=0.4A
=0.2A
4 7
(V)
5
I
CE
C
=200A
(V)
3.0
10
5
1
10
10
10
10
10
10
10
10
10
10
10
–1
–1
7
5
4
3
2
7
5
4
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
10
3
2
1
0
2
1
0
10
2 3 4 5 7
SWITCHING TIME VS. COLLECTOR
I
0
COLLECTOR CURRENT (TYPICAL)
MITSUBISHI TRANSISTOR MODULES
B
0
=1.3A
t
2
2
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT I
COLLECTOR CURRENT I
COLLECTOR CURRENT I
f
3
3
T
T
T
T
DC CURRENT GAIN VS.
SATURATION VOLTAGE
4
4
j
j
j
j
=25°C
=125°C
=25°C
=125°C
CURRENT (TYPICAL)
5
5
HIGH POWER SWITCHING USE
V
7
7
BE(sat)
10
10
10
t
s
V
1
1
1
CE
2
2
=2.0V
3
3
2 3 4 5 7
4
4
5
5
V
7
CE(sat)
7
I
V
B1
CC
10
10
V
=–I
QM100CY-H
CE
=300V
2
2
t
T
T
=5.0V
on
2
B2
2
C
C
j
j
C
INSULATED TYPE
=25°C
=125°C
=2A
3
3
10
(A)
(A)
(A)
4
4
2
5
5
7
7
10
2
10
3
3
Feb.1999