APT60GL120JU3_10 MICROSEMI [Microsemi Corporation], APT60GL120JU3_10 Datasheet

APT60GL120JU3_10

Manufacturer Part Number

APT60GL120JU3_10

Description

ISOTOP Buck chopper Trench + Field Stop IGBT4 Power module

Manufacturer

MICROSEMI [Microsemi Corporation]

Datasheet

1.APT60GL120JU3_10.pdf (5 pages)

Current page: 1 of 5
Download datasheet (192Kb)

Absolute maximum ratings

RBSOA

Symbol

CES

Trench + Field Stop IGBT4

ISOTOP

Collector - Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

Reverse Bias Safe Operating Area

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Power module

ISOTOP

Buck chopper

Parameter

www.microsemi.com

Application

Features

Benefits

•

AC and DC motor control

Switched Mode Power Supplies

Trench + Field Stop IGBT 4 Technology

ISOTOP

Very low stray inductance

High level of integration

Low conduction losses

Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive T

RoHS Compliant

= 150°C

= 25°C

= 80°C

= 25°C

APT60GL120JU3

Low voltage drop

Low leakage current

Low switching losses

Soft recovery parallel diodes

Low diode VF

Low leakage current

RBSOA and SCSOA rated

Package (SOT-227)

CES

= 60A @ Tc = 80°C

100A @ 1100V

= 1200V

Max ratings

1200

100

±20

280

of V

Unit

CEsat

1 - 5

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APT60GL120JU3_10 Summary of contents

Page 1

ISOTOP Buck chopper Trench + Field Stop IGBT4 Power module ® ISOTOP Absolute maximum ratings Symbol Parameter V Collector - Emitter Breakdown Voltage CES I Continuous Collector Current C I Pulsed Collector ...

Page 2

All ratings @ T Electrical Characteristics Symbol Characteristic I Zero Gate Voltage Collector Current CES V Collector Emitter saturation Voltage CE(sat) V Gate Threshold Voltage GE(th) I Gate – Emitter Leakage Current GES Dynamic Characteristics Symbol Characteristic C Input Capacitance ...

Page 3

Thermal and package characteristics Symbol Characteristic R Junction to Case Thermal Resistance thJC R Junction to Ambient (IGBT & Diode) thJA V RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T ,T Storage Temperature ...

Page 4

Typical Performance Curve Output Characteristics (V 100 80 T =25° Transfert Characteristics 100 =150° Switching Energy Losses vs ...

Page 5

Operating Frequency vs Collector Current 125 ZCS 100 Hard switching (A) C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 1 0.9 1 0.7 ...

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