UF1404 UTC [Unisonic Technologies], UF1404 Datasheet - Page 3

• Manufacturer Part Number: UF1404
• Description: 162A, 40V N-CHANNEL POWER MOSFET
• Manufacturer: UTC [Unisonic Technologies]

OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient ΔBV
Drain-Source Leakage Current
Gate- Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Internal Drain Inductance
Internal Source Inductance
Maximum Body-Diode Continuous Current
(Note 4)
Maximum Body-Diode Pulsed Current
(Note 1)
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature
UF1404
ELECTRICAL CHARACTERISTICS
2. Pulse width≤300µs, Duty cycle≤2%
3. C
4. Calculated continuous current based on maximum allowable junction temperature. Package limitation current
V
is 75A
DSS
UNISONIC TECHNOLOGIES CO., LTD
OSS
www.unisonic.com.tw
PARAMETER
eff. is a fixed capacitance that gives the same charging time as C
Forward
Reverse
SYMBOL
R
V
BV
t
t
C
C
Preliminary
D(OFF)
C
Q
I
I
DS(ON)
Q
Q
GS(TH)
D(ON)
V
Q
I
DSS
t
DSS
GSS
L
L
OSS
RSS
t
t
I
SM
RR
(T
ISS
SD
GS
GD
R
S
RR
DSS
F
D
S
G
J
/ΔT
=25°C, unless otherwise specified)
J
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
(Note 2)
V
R
Between
(0.25in.)
and center of die contact
MOSFET symbol showing
the integral reverse p-n
junction diode.
I
I
T
D
S
F
J
GS
DS
DS
GS
GS
DS
GS
GS
DD
=95A, di/dt=100A/µs,
=95A, V
D
=95A, V
=25°C (Note 2)
=0.21Ω (Note 2)
=0V, I
=40V, V
=32V, V
=+20V
=-20V
=V
=10V, I
=0V, V
=20V, I
GS
, I
TEST CONDITIONS
D
DS
GS
D
DS
=250µA
from
D
D
lead,
=250µA
GS
GS
=32V, V
=0V, T
=95A (Note 2)
=95A, R
=25V, f=1.0MHz
=0V
=0V, T
package
6
J
=25°C (Note 2)
GS
G
D
J
=150°C
=2.5Ω,
=1mA
=10V
mm
OSS
while V
DS
Power MOSFET
is rising from 0 to 80%
MIN TYP MAX UNIT
2.0
40
0.036
7.36
1.68
0.24
160
140
180
4.5
7.5
3.5
35
42
17
72
26
71
QW-R502-641.a
+200 nA
-200
250
200
162
650
110
270
3 of 6
4.0
1.3
20
60
4
V/°C
mΩ
µA
µA
nA
nC
nC
nC
nH
nH
µC
nF
nF
nF
ns
ns
ns
ns
ns
V
V
A
A
V