MX27C8111MC-10 MCNIX [Macronix International], MX27C8111MC-10 Datasheet - Page 4

• Manufacturer Part Number: MX27C8111MC-10
• Description: 8M-BIT [1M x8/512K x16] CMOS OTP ROM WITH PAGE MODE
• Manufacturer: MCNIX [Macronix International]

P/N: PM0329
Q8-15. If Q15/A-1 = VIL, outputs Q0-7 present data bits
Q0-7.
STANDBY MODE
The MX27C8111 has a CMOS standby mode which
reduces the maximum VCC current to 100 uA. It is
placed in CMOS standby when CE is at VCC ± 0.3 V.
The MX27C8111 also has a TTL-standby mode which
reduces the maximum VCC current to 1.5 mA. It is
placed in TTL-standby when CE is at VIH. When in
standby mode, the outputs are in a high-impedance
state, independent of the OE input.
TWO-LINE OUTPUT CONTROL FUNCTION
To accommodate multiple memory connections, a two-
line control function is provided to allow for:
It is recommended that CE be decoded and used as the
MODE SELECT TABLE
NOTES: 1. VH = 12.0V ± 0.5V
1. Low memory power dissipation,
2. Assurance that output bus contention will not
occur.
MODE
Read (Word)
Read (Upper Byte)
Read (Lower Byte)
Output Disable
Standby
Program
Program Verify
Program Inhibit
Manufacturer Code(3)
Device Code(3)
2. X = Either VIH or VIL.
3. A1-A8, A10-A18 = VIL(for auto select)
CE
VIL
VIL
VIL
VIL
VIH
VIL
VIH
VIH
VIL
VIL
OE
VIL
VIL
VIL
VIH
X
VIH
VIL
VIH
VIL
VIL
A9
X
X
X
X
X
X
X
X
VH
VH
4
primary device-selecting function, while OE be made a
common connection to all devices in the array and
connected to the READ line from the system control bus.
This assures that all deselected memory devices are in
their low-power standby mode and that the output pins
are only active when data is desired from a particular
memory device.
SYSTEM CONSIDERATIONS
During the switch between active and standby
conditions, transient current peaks are produced on the
rising and falling edges of Chip Enable. The magnitude
of these transient current peaks is dependent on the
output capacitance loading of the device. At a minimum,
a 0.1 uF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
Vcc and GND to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on One Time
Programmable Read Only Memory arrays, a 4.7 uF bulk
electrolytic capacitor should be used between VCC and
GND for each eight devices.
capacitor should be close to where the power supply is
connected to the array.
4. See DC Programming Characteristics for VPP voltages.
5. BYTE/VPP is intended for operation under DC Voltage conditions
6. Manufacture code = 00C2H
only.
Device code = B816H
A0
X
X
X
X
X
X
X
X
VIL
VIH
Q15/A-1
Q15 Out
VIH
VIL
High Z
High Z
Q15 In
Q15 Out
High Z
0B
1B
MX27C8111
BYTE/
VPP(5)
VCC
GND
GND
X
X
VPP
VPP
VPP
VCC
VCC
Q8-14
Q8-14 Out
High Z
High Z
High Z
High Z
Q8-14 In
Q8-14 Out
High Z
00H
38H
The location of the
REV. 2.6, AUG. 22, 2001
Q0-7
Q0-7 Out
Q8-15 Out
Q0-7 Out
High Z
High Z
Q0-7 In
Q0-7 Out
High Z
C2H
16H