GM71C4403C-60 LG [LG Semicon Co.,Ltd.], GM71C4403C-60 Datasheet - Page 3
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GM71C4403C-60
Manufacturer Part Number
GM71C4403C-60
Description
1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
Manufacturer
LG [LG Semicon Co.,Ltd.]
Datasheet
1.GM71C4403C-60.pdf
(10 pages)
LG Semicon
DC Electrical Characteristics (V
Note: 1. I
Symbol
V
V
I
I
I
I
I
I
I
I
I
CC1
CC2
CC3
CC4
CC5
CC6
CC8
I(L)
O(L)
OH
OL
2. Address can be changed once or less while RAS = V
3. Address can be changed once or less while CAS = V
CC
output open condition.
depends on output load condition when the device is selected. I
Output Level
Output “H” Level Voltage (I
Output Level
Output “L” Level Voltage (I
Operating Current
Average Power Supply Operating Current
(RAS, CAS, Address Cycling: t
Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS= V
RAS-Only Refresh Current
Average Power Supply Current
RAS-Only Refresh Mode
(RAS Cycling, CAS = V
Extended Data Out Page Mode Current
Average Power Supply Current
Extended Data Out Mode
(RAS = V
Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS= V
CAS-before-RAS Refresh Current
(t
Standby Current RAS = V
Input Leakage Current
Any Input (0V<=V
Output Leakage Current
(D
D
RC
OUT
OUT
= t
=High-Z)
is Disabled, 0V<=V
RC
min)
IL
, CAS, Address Cycling: t
IH
IH
, D
, WE, OE, Address and D
CAS = V
D
IN
OUT
<=7V)
OUT
Parameter
= High-Z)
= Enable
IH
OUT
, t
CC
IH
RC
<=7V)
IL
OUT
OUT
= t
= 5V+/-10%, T
RC
= 4.2mA)
= -5mA)
RC
= t
min)
RC
HPC
min)
= t
HPC
IN
IL
IH
=V
min)
.
.
IH
A
or V
= 0 ~ 70C)
IL
,
CC
(max) is specified at the
60ns
70ns
80ns
60ns
70ns
80ns
60ns
70ns
80ns
60ns
70ns
80ns
Min
-10
-10
2.4
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GM71C4403C
Max
110
100
130
120
110
110
100
110
100
V
0.4
90
90
90
10
10
2
1
5
CC
Unit
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
Note
1, 2
1, 3
2
1
3