ON1113 PANASONIC [Panasonic Semiconductor], ON1113 Datasheet
ON1113
Manufacturer Part Number
ON1113
Description
Transmissive Photosensors (Photo lnterrupters)
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
1.ON1113.pdf
(3 pages)
Transmissive Photosensors (Photo lnterrupters)
CNA1011K
Photo lnterrupter
For contactless SW, object detection
■ Overview
high efficiency GaAs infrared light emitting diode used as the light
emitting element, and a high sensitivity phototransistor is used as the
light detecting element.
■ Features
■ Absolute Maximum Ratings T
■ Electrical-Optical Characteristics T
Note) 1. Input and output are practiced by electricity.
Publication date: April 2004
• Highly precise position detection: 0.3 mm
• Wide gap between emitting and detecting elements, suitable for
• Fast response: t
• Small output current variation against change in temperature
Input (Light
emitting diode) Forward current
Output (Photo Collector-emitter voltage
transistor)
Temperature
Input
characteristics Reverse current
Output
characteristics (Base open)
Transfer
characteristics Collector-emitter saturation voltage V
CNA1011K is a small size photocoupler package consisting of a
thick plate detection
2. This device is designed be disregarded radiation.
3. * : Switching time measurement circuit
50 Ω
Forward voltage
Terminal capacitance
Collector-emitter cutoff current
Collector-emitter capacitance
Collector current
Rise time
Fall time
Parameter
Parameter
Reverse voltage
Power dissipation
(Base open)
Emitter-collector voltage
(Base open)
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Sig. in
r
, t
*
*
f
= 6 µs (typ.)
V
R
CC
L
Sig. out
* 1
(ON1113)
* 2
Symbol
Symbol
a
V
V
I
T
T
CE(sat)
= 25°C
V
V
C
P
P
CEO
C
I
I
I
I
CEO
ECO
t
t
(Input pulse)
(Output pulse)
opr
C
stg
R
C
F
D
C
r
f
R
C
F
t
a
−30 to +100
= 25°C ± 3°C
−25 to +85
I
V
V
V
V
V
I
V
R
F
F
Rating
L
Note) The part number in the parenthesis shows conventional part number.
R
R
CE
CE
CC
CC
= 50 mA
= 50 mA, I
100
= 100 Ω
= 3 V
= 0 V, f = 1 MHz
SHG00018BED
50
75
30
20
3
5
= 10 V
= 10 V, f = 1 MHz
= 10 V, I
= 10 V, I
t
r
C
F
C
Conditions
Unit
mW
mW
mA
mA
= 0.1 mA
°C
°C
= 20 mA, R
= 1 mA
V
V
V
t
f
90%
10%
Note) * 1: Input power derating ratio is 1.0 mW/°C at
t
t
r
f
L
: Rise time
: Fall time
= 100 Ω
* 2: Output power derating ratio is 1.34 mW/°C
(Note) 1. Tolerance unless otherwise specified is ±0.3
T
at T
Mark for indicating
LED side φ1.5
a
2
1
≥ 25°C.
2. ( ) Dimension is reference
a
≥ 25°C.
(10.1)
13.6
3
4
A'
A
Min
0.3
4- 0.45
2-2.0
5.0
7.0
0.4
±0.2
±0.2
Typ
1.2
2-φ3.2
35
5
6
6
Device
PISTR104-012 Package
center
±0.2
(2.54)
Max
200
1.5
0.5
10
SEC. A-A'
13.0
0.45
1: Anode
2: Cathode
3: Collector
4: Emitter
19.2
Unit: mm
±0.15
±0.15
Unit
mA
µA
nA
pF
pF
µs
µs
V
V
1
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ON1113 Summary of contents
Page 1
... Transmissive Photosensors (Photo lnterrupters) CNA1011K (ON1113) Photo lnterrupter For contactless SW, object detection ■ Overview CNA1011K is a small size photocoupler package consisting of a high efficiency GaAs infrared light emitting diode used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. ...
Page 2
CNA1011K − Ambient temperature T (° 1 ...
Page 3
Caution for Safety DANGER Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any ...