R1RW0408DGE-2PI RENESAS [Renesas Technology Corp], R1RW0408DGE-2PI Datasheet

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R1RW0408DGE-2PI

Manufacturer Part Number
R1RW0408DGE-2PI
Description
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
R1RW0408DGE-2PI
Manufacturer:
ROHM
Quantity:
253
R1RW0408DI Series
Wide Temperature Range Version
4M High Speed SRAM (512-kword
Description
The R1RW0408DI is a 4-Mbit high speed static RAM organized 512-kword
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408DI
is packaged in 400-mil 36-pin SOJ for high density surface mounting.
Features
Ordering Information
Type No.
R1RW0408DGE-2PI
Rev.1.00, Mar.12.2004, page 1 of 10
Single supply: 3.3 V
Access time: 12 ns (max)
Completely static memory
Equal access and cycle times
Directly TTL compatible
Operating current: 100 mA (max)
TTL standby current: 40 mA (max)
CMOS standby current: 5 mA (max)
Center V
Temperature range:
No clock or timing strobe required
All inputs and outputs
CC
and V
SS
type pin out
40 to +85 C
0.3 V
Access time
12 ns
8-bit)
Package
400-mil 36-pin plastic SOJ (36P0K)
8-bit. It has realized high
REJ03C0113-0100Z
Mar.12.2004
Rev. 1.00

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R1RW0408DGE-2PI Summary of contents

Page 1

... CMOS standby current (max) Center V and V type pin out CC SS Temperature range +85 C Ordering Information Type No. Access time R1RW0408DGE-2PI 12 ns Rev.1.00, Mar.12.2004, page 8-bit) REJ03C0113-0100Z Rev. 1.00 Mar.12.2004 8-bit. It has realized high Package 400-mil 36-pin plastic SOJ (36P0K) ...

Page 2

R1RW0408DI Series Pin Arrangement CS# I/O1 I/ I/O3 I/O4 WE# Pin Description Pin name A0 to A18 I/O1 to I/O8 CS# OE# WE Rev.1.00, Mar.12.2004, page 36-pin SOJ 1 36 ...

Page 3

R1RW0408DI Series Block Diagram (LSB) A14 A13 A12 A5 A6 Row A7 decoder A11 A10 A3 A1 (MSB) CS I/O1 . Input data . control . I/O8 WE# CS# OE# CS Rev.1.00, Mar.12.2004, page 1024-row 32-column 16-block ...

Page 4

R1RW0408DI Series Operation Table CS# OE# WE# Mode H Standby Output disable Read Write Write Note ...

Page 5

R1RW0408DI Series DC Characteristics ( + 3 Parameter Symbol Input leakage current Output leakage current Operation power supply current I CC Standby power ...

Page 6

R1RW0408DI Series AC Characteristics ( + 3.3 V 0.3 V, unless otherwise noted.) CC Test Conditions Input pulse levels: 3.0 V/0.0 V Input rise and fall time Input and output timing reference ...

Page 7

R1RW0408DI Series Write Cycle Parameter Write cycle time Address valid to end of write Chip select to end of write Write pulse width Address setup time Write recovery time Data to write time overlap Data hold from write time Write ...

Page 8

R1RW0408DI Series Timing Waveforms Read Timing Waveform (1) (WE Address CS# OE# High impedance D OUT Read Timing Waveform (2) (WE Address OUT Rev.1.00, Mar.12.2004, page ...

Page 9

R1RW0408DI Series Read Timing Waveform (3) (WE CS CLZ High D OUT impedance Write Timing Waveform (1) (WE# Controlled) Address OE WE#* t OHZ D OUT D IN Rev.1.00, Mar.12.2004, page ...

Page 10

R1RW0408DI Series Write Timing Waveform (2) (CS# Controlled) Address OUT D IN Rev.1.00, Mar.12.2004, page Valid address ...

Page 11

Revision History Rev. Date Contents of Modification Page Description 0.01 Sep. 30, 2003 Initial issue 1.00 Mar.12.2004 Deletion of Preliminary R1RW0408DI Series Data Sheet ...

Page 12

Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...

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